Allicdata Part #: | EGP10BHE3/54-ND |
Manufacturer Part#: |
EGP10BHE3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A DO204AL |
More Detail: | Diode Standard 100V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | EGP10BHE3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 22pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | EGP10B |
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EGP10BHE3/54 is a diode that falls into the category of single rectifiers. It is generally used for various power applications, such as low-voltage motor control, power line frequency conversion transformation and solar energy conversion, as well as automotive and industrial applications. It is one of the most common diodes used today due to its reliability and performance. It is a high-efficiency component and is available in various package types such as TO-220, SANYO SOP, SMA, and through hole. It is a cost effective component and provides high-speed and low-power operation.
The EGP10BHE3/54 rectifier diode consists of a PN junction that allows current to flow in one direction, with one terminal (anode) being more positive than the other (cathode). The EGP10BHE3/54 is designed to have an avalanche breakdown voltage of 550V, which enables it to be used for reverse voltage requiring application voltage up to 300V. This diode also has a low forward voltage drop at 0.55V, allowing it to be used in high efficiency applications. Furthermore, it features low reverse current leakage of up to 0.3mA, and fast switching speeds of up to 4nA. Furthermore, it offers an insulated package, which allows it to be used in high-pressure, high-temperature applications.
The working principle of the EGP10BHE3/54 rectifier diode is simple. When the anode is more positive than the cathode, it creates a potential difference which allows current to flow in one direction. This is known as forward bias. The voltage drop across the diode is dependent on the type of semiconductor material. When the voltage is negative across the diode, current is blocked, as the applied voltage is greater than the threshold voltage of the PN junction, this is known as reverse bias.
The EGP10BHE3/54 rectifier diodes are primarily used for power converting applications for the purpose of rectifying AC current. They can be used to build rectifier circuits, allowing for the conversion of AC current to DC current. This diode can also be used in certain types of motor controllers, power supplies and solar power systems, as well as automotive and industrial applications. It offers an insulated package, which allows it to be used in high-pressure, high-temperature applications, while still producing a low forward voltage drop.
In conclusion, the EGP10BHE3/54 rectifier diodes are a reliable, cost-effective, and efficiency component for various power applications. It features an insulated package, as well as low forward voltage drop, low reverse current leakage and fast switching speeds. Furthermore, it has an avalanche breakdown voltage of 550V, which allows it to be used for reverse voltage application with a voltage up to 300V. Due to its overall features, this diode is widely used in various applications, such as low-voltage motor control, power line frequency conversion transformers, solar energy converters and many other power applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EGP10G | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10K | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
EGP10F | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10D | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10B | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10C | ON Semicondu... | 0.07 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10D-E3/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10AHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGP10BHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10CHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10DHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10FHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10GHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10AHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGP10BEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10BHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10CEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10CHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10DEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10DHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10FHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10GEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10GHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10A-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGP10B-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10C-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10F-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10A-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGP10B-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10C-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10D-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10F-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10GE-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10G-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10BE-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10CE-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10DE-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10G-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10D-E3/53 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10G-E3/53 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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