FCH104N60

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The FCH104N60 is a high voltage power metal-oxide-semiconductor field-effect transistor (MOSFET) built on a p-type substrate. It is an insulated gate device, and is commonly used in power management applications such as motor control and lighting. The FCH104N60 also has high current handling capabilities, making it an excellent choice for automotive and industrial applications.

The FCH104N60 has a four-pin package and a maximum drain-source resistance of 0.04 ω. Its drain-source breakdown voltage is 600 V, and its drain-source breakdown capacitance is 95 pF. Furthermore, its gate-source voltage range is -20 V to +20 V and its maximum gate leakage current is 0.006 mA. Finally, its maximum drain current is 9 A, which is significantly higher than that of many other MOSFETs.

The working principle behind the FCH104N60 is fairly straightforward. It is based on the principle that a p-type substrate and an insulated gate, when connected to a suitable source of voltage, will allow a current to flow when a voltage is applied between the drain and source terminals. Since the voltage between the gate and source terminals is low, the current passing through the channel created by the substrate is low. This means that the FCH104N60 will allow only a certain amount of current to flow, thus preventing higher-current applications that could damage the device.

The FCH104N60 is also suitable for switching applications due to its low gate-channel capacitance. Its high rate of current gain (hfe) and high frequency characteristics make it an excellent choice for high-speed switching operations. Additionally, its high-temperature operation capability makes it an ideal choice for automotive and industrial applications, as it can function properly even in harsh environments.

In summary, the FCH104N60 is an excellent choice for power management applications, particularly those requiring high current handling capabilities and high-temperature operation. Its ability to handle high currents, low gate-channel capacitance, and its simple operation make it an excellent choice for a variety of applications. Furthermore, its low gate-source leakage current, high rate of current gain, and high frequency capabilities make it an excellent choice for high-speed switching applications. Finally, its four-pin package and low drain-source resistance make it an excellent choice for automotive and industrial applications.

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