Allicdata Part #: | FCH125N60E-ND |
Manufacturer Part#: |
FCH125N60E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 29A TO247 |
More Detail: | N-Channel 600V 29A (Tc) 278W (Tc) Through Hole TO-... |
DataSheet: | FCH125N60E Datasheet/PDF |
Quantity: | 324 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 278W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2990pF @ 380V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Series: | SuperFET® II |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 14.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FET (Field Effect Transistor) series of transistors are among some of the most commonly used transistors today. A popular model of FET is the FCH125N60E, which is classified as a single type MOSFET (metal-oxide-semiconductor field-effect transistor). This transistor is suitable for a wide variety of different applications, and its working principle is relatively simple. This article will explain the FCH125N60E application field and working principle in detail.
FCH125N60E Application Field
The FCH125N60E is generally used for applications requiring switching or amplifying circuits. It is commonly used in digital logic circuits, analog signal processing amplifiers, audio amplifiers and other amplifying applications. Additionally, it can also be used for power supply circuits, variable power supplies, electric motor control and other power control applications.
The FCH125N60E also features high input resistance and low conductance, making it ideally suited for applications that require reliability and accuracy in data processing. It is also capable of operating with fixed or variable power levels, allowing flexibility in data processing.
FCH125N60E Working Principle
The working principle of the FCH125N60E is fairly simple. It consists of two main parts, the source and the drain. The source is the input and the drain is the output. An electrical field is generated between these two terminals, and the amount of electric field can be controlled with the gate. By controlling the amount of current flowing between the source and the drain, the amplitude of the signal output can be regulated.
The gate of the FCH125N60E is usually connected to the main power supply. When a voltage is applied to it, the gate voltage switches on, enabling current to travel from the source to the drain. As the current increases, the electric field between the source and the drain also increases. This causes the current to be attenuated, thus creating an amplified effect.
The gate voltage of the FCH125N60E can be varied by changing the gate capacity. Increasing the gate capacity will increase the electric field and the output signal strength, while decreasing the gate capacity will decrease the output signal strength. The FCH125N60E is capable of controlling the amount of current from a few nano-amps to several milli-amps, making it ideal for a wide range of applications.
The FCH125N60E is a versatile and reliable transistor, making it suitable for a wide variety of applications. Its simple working principle and ability to be used with variable power levels make it an ideal choice for a wide range of applications. The FCH125N60E is a reliable and cost-effective solution for many different electronic projects.
The specific data is subject to PDF, and the above content is for reference
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