Allicdata Part #: | FCH125N65S3R0-F155OS-ND |
Manufacturer Part#: |
FCH125N65S3R0-F155 |
Price: | $ 3.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | SUPERFET3 650V TO247 PKG |
More Detail: | N-Channel 650V 24A (Tc) 181W (Tc) Through Hole TO-... |
DataSheet: | FCH125N65S3R0-F155 Datasheet/PDF |
Quantity: | 450 |
1 +: | $ 3.52800 |
10 +: | $ 3.15189 |
450 +: | $ 2.33216 |
900 +: | $ 1.89094 |
1350 +: | $ 1.76488 |
Series: | SuperFET® III |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 2.4mA |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1940pF @ 400V |
FET Feature: | -- |
Power Dissipation (Max): | 181W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
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A FCH125N65S3R0-F155 (FCH) is an enhancement-mode, high voltage, N-channel metal oxide semiconductor field-effect transistor (MOSFET). MOSFETs are commonly used as power switching devices, offering an economical and efficient solution to switching circuits. This type of transistor has a wide range of applications, and FCH is one of the most widely used types.
In most power switching applications, the FCH MOSFET provides superior performance. Its structure, which consists of a single N-type MOSFET with a metal oxide gate oxide layer, is designed to withstand high voltage and current in its operation. The FCH also provides good thermal stability and can tolerate high energy switching without damage.
The most common application for the FCH is as a switching element in high voltage power supplies, such as power inverters and high-voltage supplies for automobile batteries. These devices make efficient use of energy, as it is only used when the components are turned on. The FCH MOSFET also finds use in automotive electronics, where it is used as a power switch to control the flow of electricity to different components.
Two factors that determine the performance of the FCH are its threshold voltage (VTH) and its transconductance (gm). The VTH is the voltage level required to turn the FCH ‘on’, while the gm is the ratio of current through the FCH to the drain-source voltage. The higher the threshold voltage, the less current needs to be supplied to turn the FCH on, and the higher the transconductance, the more efficient the device is.
The FCH’s operation is based on a common concept of semiconductor principles. When the source voltage is greater than the threshold voltage, the FCH’s induced electric field polarizes the gate region, allowing electrons to flow from the source to the drain. This creates a path for current to flow, and the drain voltage follows the source voltage. There is also the effect of reverse bias, which can be used to control when and how current flows in and out of the device.
The FCH is an impressive semiconductor power switching device due to its high voltage stress parameters, low on-resistance, and easy operation. It is also relatively easy to use, as its built-in safety features reduce the risk of damage to components and system operation in the event of a faulty connection or incorrect wiring. Thanks to its widespread use and reliable performance, the FCH is one of the most popular MOSFETs on the market today.
The specific data is subject to PDF, and the above content is for reference
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