FCH130N60

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FCH130N60 is a MOSFET produced by Fairchild. It is a n-channel enhancement-mode power MOSFET which consists of an integrated gate and drain source. It is a cost effective and reliable power switch suitable for a variety of applications. This article will discuss the application field and working principle of the FCH130N60.

Application Field

FCH130N60 MOSFET is an extremely versatile device, suitable for a variety of applications. It can be used in low-noise high-frequency amplifiers and as an amplifier driver. It also has applications in audio power amplifiers, switch-mode power supplies, computer monitors, TVs, and car audio and video systems. Due to its low input capacitance and low output resistance, it is especially suitable for driving heavy loads in both DC and AC circuits.

FCH130N60 can be used in Switching Regulator Controller, Power Switching Circuits, and Power Converters. It is also used in Prototyping circuits, DC-DC Converters, Digital Amplifier, and other high-frequency circuit applications. Further, the device can also be used for voltage clamping and regulation. Because of its low ON resistance, low gate charge, and high speed, it is suitable for use in a variety of power management circuits.

Working Principle

The FCH130N60 is a metal-oxide semiconductor field-effect transistor (MOSFET). A MOSFET is a three-terminal device, with a source, a drain, and a gate. When the gate voltage is above the threshold voltage (Vth), the channel between the source and the drain opens and current can flow through. When the gate voltage is below the threshold voltage (Vth), the channel is closed, and no current flows.

In the FCH130N60, the gate voltage is applied across the gate-source terminal. The gate-source voltage (Vgs) controls the current flowing through the device. The ratio of the gate voltage to the drain current is called the transfer characteristics of the MOSFET. By varying the gate voltage, the current flowing through the device can be controlled.

The FCH130N60 is a n-channel enhancement-mode power MOSFET. It has a low drain-source on-state resistance (Rds). This is the resistance of the channel between the source and drain when the channel is fully open. The FCH130N60 has a low gate drive voltage (Vgs). This is the voltage required to open the channel between the source and drain.

The FCH130N60 is also a reliable power switch. It has a low reverse recovery time (Trr) which is important for high-frequency applications. The device also has a low gate charge (Qg) and a low input capacitance (Ciss). These characteristics are important for low-noise operation and rapid switching.

In conclusion, the FCH130N60 is an excellent MOSFET suitable for a variety of applications. It is a cost effective and reliable power switch suitable for low-noise operation and rapid switching. It has a low Rds and can be used in low-noise high-frequency amplifiers as well as other audio and video applications.

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