Allicdata Part #: | FCH165N65S3R0-F155-ND |
Manufacturer Part#: |
FCH165N65S3R0-F155 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | SF3 650V 165MOHM E TO247L |
More Detail: | N-Channel 650V 19A (Tc) 154W (Tc) Through Hole TO-... |
DataSheet: | FCH165N65S3R0-F155 Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 154W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 400V |
Vgs (Max): | ±30V |
Series: | SuperFET® III |
Vgs(th) (Max) @ Id: | 4.5V @ 1.9mA |
Rds On (Max) @ Id, Vgs: | 165 mOhm @ 9.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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FCH165N65S3R0-F155 is a type of field-effect transistor (FET) commonly used in electronic circuits. It is a power MOSFET, meaning it can handle large amounts of current and dissipate large amounts of heat without damage. The FCH165N65S3R0-F155 is a single n-channel MOSFET, meaning it has a single channel of electrons running through it.
MOSFET transistors are field-effect transistors, and they are the most important type of transistor for electronics. FETs operate by the electric field from the gate controlling the flow of electrons from the source to the drain. The FCH165N65S3R0-F155 is a voltage-controlled device, which means the voltage on its gate terminal controls the current between its source and drain terminals.
The FCH165N65S3R0-F155 is widely used for a variety of applications including power management and DC/DC conversion. The FCH165N65S3R0-F155 is designed to handle large amounts of current (up to 650A) while maintaining high efficiency and low switching losses. It is most commonly used to switch power MOSFETs such as those used in power converters and power supplies, as well as high-current switching devices such as those used in electric vehicle (EV) charging systems.
The FCH165N65S3R0-F155 has a few key features that make it well-suited for these power electronic applications. First, it has a low gate charge, meaning it takes less time and energy to turn on or off the FET. It also has a low gate-to-drain capacitance, which helps reduce the power loss and switching times. Additionally, it has low RDS(ON) and high dV/dT, meaning it can quickly and efficiently switch large currents with minimal losses.
In order to use the FCH165N65S3R0-F155 correctly, it must be correctly connected to the power source and other components, and it must be safely wired with appropriate voltage and current ratings. It must be wired in accordance with the manufacturer\'s specifications in order to ensure it is safely used. Additionally, it is important to use the appropriate heat sink and cooling system in order to dissipate the heat generated by the FET, as the FCH165N65S3R0-F155 is a power MOSFET and it can generate a significant amount of heat.
In summary, the FCH165N65S3R0-F155 is a single n-channel MOSFET designed for power management and DC/DC conversion applications. Its low gate charge, low RDSON, and high dV/dT make it well-suited for these types of applications. It must be correctly wired and adequately cooled in order to ensure its performance and longevity.
The specific data is subject to PDF, and the above content is for reference
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