Allicdata Part #: | FCH150N65F-F155-ND |
Manufacturer Part#: |
FCH150N65F-F155 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 650V 24A |
More Detail: | N-Channel 650V 24A (Tc) 298W (Tc) Through Hole TO-... |
DataSheet: | FCH150N65F-F155 Datasheet/PDF |
Quantity: | 218 |
Series: | SuperFET® II |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.4mA |
Gate Charge (Qg) (Max) @ Vgs: | 94nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3737pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | 298W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 Long Leads |
Package / Case: | TO-247-3 |
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FCH150N65F-F155 is a kind of power semiconductor device, classified as transistors, FETs, and MOSFETs of the single type. In an electronic circuit, a power transistor is primarily used for switching, voltage and current regulation, signal amplification, and generation of electrical signals. An FET is a unipolar field effect transistor, meaning that it processes only one type of current, commonly referred to as “holes”, as opposed to traditional bipolar transistors that process both “holes” and “electrons”. Due to its superior current and voltage control characteristics, the FET is often used in power supplies and other power switching applications. The FCH150N65F-F155 is a high-voltage, high-current N-channel MOSFET, providing excellent switching performance and reliability.
The working principle of a FCH150N65F-F155 can be explained as follows: As electricity passes through the device, it passes through a metal oxide semiconductor (MOS) material, which consists of a source, a drain, and a gate electrode. The voltage on the gate electrode causes a change in the conductivity of the MOS material, referred to as the “channel”, which is then linked to the source and drain electrodes of the device. As the voltage is increased, the current in the channel increases as well, which is then sent to the source or drain electrodes. When the gate voltage is decreased, the current in the channel decreases, thus controlling the current flow through the device.
The FCH150N65F-F155 is commonly found in applications such as stepper motors, DC motors, actuators, solenoids, relays, series and parallel circuits, transistor amplifiers, and many other digital and electronic apparatus. In particular, it is well-suited for inverters and DC-to-DC converters, as its high current and low on-resistance capabilities allow it to switch large loads without dissipating too much heat. It is also found in automotive applications due to its high-temperature performance and fast switching speeds. Additionally, it is used in motor drives and in applications that require high-frequency pulse waves.
The FCH150N65F-F155 has a number of advantages that make it an ideal choice for a wide variety of applications. Its high-current capability allows it to switch large loads without causing too much heat. Its fast switching speeds make it suitable for a variety of digital and electronic circuit applications. Additionally, its low on-resistance makes it an excellent choice for many motor and inverter applications. Finally, its high-temperature performance makes it suitable for a variety of automotive, industrial, and medical applications.
In summary, the FCH150N65F-F155 is a power semiconductor device that is classified as transistors, FETs, and MOSFETs of the single type. It has a number of advantages that make it an ideal choice for applications such as stepper motors, DC motors, inverters, relay circuits, transistor amplifiers, and many other digital and electronic apparatus. Additionally, its high-current and fast switching speeds make it a highly reliable and efficient option for a variety of power switching applications.
The specific data is subject to PDF, and the above content is for reference
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