FCH104N60F-F085

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	357W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4302pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	139nC @ 10V
Series:	Automotive, AEC-Q101, SuperFET® II
Rds On (Max) @ Id, Vgs:	104 mOhm @ 18.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	37A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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FCH104N60F-F085 is a single insulated gate field-effect transistor (MOSFET) device that operates as a switch. It can be used in many different applications, and it is a popular choice because of its low electrical power dissipation, gate charge, and gate threshold voltage.FCH104N60F-F085 can be used in both commercial and industrial applications. It is widely used in motor controls and in power supplies. It can be used in power conversion applications such as solar energy and wind energy. It is also suitable for LED lighting, power distribution and automotive powertrain applications.In motor control applications, FCH104N60F-F085 can be used as an on/off switch for controlling the speed of motors and driving them at different speeds. FCH104N60F-F085 is also used in power supplies to control the power delivered to electronic components. It allows for more precise control of voltage and current in an efficient way.FCH104N60F-F085 is also suitable for applications that may require more than one switching element. It can be used to provide isolation between the switching elements and the load. For example, it can be used in power conversion such as solar energy and wind energy where multiple switching elements are needed.The working principle of FCH104N60F-F085 is quite simple. It is a p-type MOSFET which has a gate charge that is much lower than an equivalent n-type MOSFET. The gate charge is the amount of energy that is required to open or close the gate of the MOSFET. The lower the gate charge, the less energy is required to control the device.The gate of the MOSFET is driven by an electric signal with a certain voltage and current. When the gate is in its high state, the drain current of the MOSFET is at its maximum limit. When the gate is in the low state, the drain current of the MOSFET is at its minimum level. This is how the MOSFET performs as a switch.FCH104N60F-F085 is a versatile device that can be used in many different applications. It provides efficient and precise control of voltage and current, making it a popular choice for many applications. It can be used in motor control applications as an on/off switch as well as in power conversion applications such as solar energy and wind energy. The low gate charge and gate threshold voltage of FCH104N60F-F085 makes it an ideal choice for many applications.

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