FCH165N60E Allicdata Electronics
Allicdata Part #:

FCH165N60E-ND

Manufacturer Part#:

FCH165N60E

Price: $ 2.82
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 23A TO247
More Detail: N-Channel 600V 23A (Tc) 227W (Tc) Through Hole TO-...
DataSheet: FCH165N60E datasheetFCH165N60E Datasheet/PDF
Quantity: 1000
450 +: $ 2.56361
Stock 1000Can Ship Immediately
$ 2.82
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2434pF @ 380V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Series: SuperFET® II
Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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FCH165N60E is a type of high performance, insulatedgate power field-effect transistor (IGBT). It is typicallyused as a switches in power switching applications. This is due to its high voltage, high current, and low on-resistance capabilities. FCH165N60E hashigh switching frequency, low switching losses, and low saturation voltage. It can be used in various power conversion applications, such as motor control, UPS, DC/DC andAC/DC converters, solar inverters, and Static VarCompensators (SVCs).

Working Principle

The FCH165N60E utilizes a non-polar or insulated-gate structure that consists of an insulatedgate field-effect transistor (IGFET) and a power bipolar transistor (BPT) device. The IGFET device is controlled by the gate voltage, which allows for efficient current conduction. The power bipolar transistor device works in parallel with the IGFET device, providing increased current carrying capability.

When the gate voltage of the FCH165N60E is low, thei-channel is inverted, and current is not allowed to flow. When a high voltage is applied, the i-channel becomes n-channel and current is allowed to flow. This current flow is then amplified by the power bipolardevice, resulting in a high current being delivered.

The FCH165N60E features an on-resistance of only 3.2mOhm and an operating voltage of up to 1.7kV. This allows it to handle high current and provide efficient power conversion. The FCH165N60E also features a low gate chargeand high switching frequency of up to 7kHz.

Application Field

The FCH165N60E is used in various power conversion applications, such as motor control, UPS, DC/DC and AC/DC converters, solar inverters, and Static Var Compensators (SVCs). It can also be used in high-power automotivemotors, aerospace motors, and wind and photovoltaicinverters. The FCH165N60E is suitable for high-powerindustrial applications due to its high voltage and power capabilities.

The FCH165N60E is also suitable for use in appliances that require high rates of power transfer. This includes computers, TVs, microwaves and other home electronic appliances. The FCH165N60E is capable of handling high current and at the same time, provides high efficiency and long life.

In addition, the FCH165N60E is also used in power-factor correction (PFC) applications. PFC serves to adjust the waveform of an AC current to reduce flicker and distortion in thevoltage supply. The FCH165N60E is ideal for this application due to its low gate charge, low switching losses, high switching frequency and low saturation voltage.

The FCH165N60E is an ideal choice for high power-conversion applications, due to its high current carrying capabilities, low on-resistance, and high switching frequency. It is suitable for motor control, UPS, DC/DC and AC/DC converters, solar inverters and Static Var Compensators (SVCs). In addition,the FCH165N60E can also be used in high power-factor correction applications.

The specific data is subject to PDF, and the above content is for reference

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