FCH170N60

Vgs(th) (Max) @ Id:	3.5V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	227W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2860pF @ 380V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	55nC @ 10V
Series:	SuperFET® II
Rds On (Max) @ Id, Vgs:	170 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	22A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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FCH170N60 Application Field and Working Principle

The FCH170N60 is a power MOSFET that is designed to operate in a wide range of applications. This device is characterized by its low on-state resistance, low gate charge and fast operating speed. Additionally, the FCH170N60 has the capability to operate in a wide range of frequencies for high power applications.The FCH170N60 is a high voltage MOSFET with a drain-source breakdown voltage of 600V and a maximum drain-source voltage of 180V. This device has a maximum gate-source voltage of 15V, a maximum current of 170A, a low on-state resistance of 0.079 ohms, and a maximum power dissipation of 350W. With these features, the FCH170N60 is ideal for use in power converters, offline switch mode power supplies, DC/DC converters, and various other high-power applications.In order to properly operate the FCH170N60, it is paramount to understand its working principle. This device is a four-terminal insulated gate type of MOSFET, which relies on the majority carrier injection for conduction. This means that the majority carriers – electrons in the case of a n-type MOSFET – are injected from the source to the drain terminal in order to establish current conduction. Once the MOSFET is applied with a voltage greater than the threshold voltage, the device is switched on.Once the device is switched on, a current is established between the drain and source terminal, with the drain current being directly proportional to the gate current. The gate current is applied to the control electrode (gate), which is capacitively coupled to the body region. This capacitive coupling creates an electric field which, in turn, attracts minority carriers away from the body region, which decreases the threshold voltage of the device. As the gate voltage is further increased, more electrons are injected and the drain current continues to increase.The FCH170N60 MOSFET is able to tolerate transients caused by inductive and resistive loads. This feature is enabled by the SITrenDSurge feature, which is a technology that reduces the body diode recovery time and improves the device’s ability to withstand surge currents. Finally, the FCH170N60 is able to operate at temperatures from -55°C to 175°C due to its increased Power MOSFET temperature rating.In summary, the FCH170N60 is a high voltage power MOSFET that is suitable for use in a wide range of applications. This device features a breakdown voltage of 600V, a maximum drain-source voltage of 180V, a maximum gate-source voltage of 15V, a maximum current of 170A and a low on-state resistance of 0.079 ohms. With these features, the FCH170N60 is able to withstand transients caused by inductive and resistive loads, and is able to operate in temperatures from -55°C to 175°C due to its increased temperature rating. Furthermore, understanding the fundamental working principle of the FCH170N60 is essential in order to properly interface this device in a wide range of applications.

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