FDB110N15A Allicdata Electronics

FDB110N15A Discrete Semiconductor Products

Allicdata Part #:

FDB110N15ATR-ND

Manufacturer Part#:

FDB110N15A

Price: $ 1.44
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 150V 92A D2PAK
More Detail: N-Channel 150V 92A (Tc) 234W (Tc) Surface Mount D²...
DataSheet: FDB110N15A datasheetFDB110N15A Datasheet/PDF
Quantity: 1000
1 +: $ 1.44000
10 +: $ 1.39680
100 +: $ 1.36800
1000 +: $ 1.33920
10000 +: $ 1.29600
Stock 1000Can Ship Immediately
$ 1.44
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 234W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4510pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 11 mOhm @ 92A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDB110N15A is a device from the semiconductors family, classified as a single MOSFET. As an acronym, MOSFET means metal-oxide-semiconductor field-effect transistor, but this device is more commonly referred to as an insulated gate bipolar transistor (IGBT). The FDB110N15A offers a particularly excellent performance for various electrical applications, thanks to its very low input and output capacitance, high breakdown voltage and high overall efficiency, among other characteristics.

The applications of the FDB110N15A are many, although commonly it is used in a variety of industrial applications. It is often used in motor control applications, as it offers a precise and open loop motor drive capability. This provides motor designers with a high degree of control and flexibility, which consequently, leads to precise and repeatable motor control. It is also popular in servo, robotics, and traction control applications.

The FDB110N15A works through the inversion of the P-N junction during an on or off state. During an on state, the positive voltage applied to the gate terminal of the FDB110N15A will cause a positive charge to be induced on the entire body of the device, which in turn will draw the majority carriers from the junction and forward bias it. This has the effect of allowing current to flow from source to drain.

During an off mode, the negative voltage applied to the gate terminal of the FDB110N15A will again cause a positive charge to be induced on the entire device, but this time it will draw the majority carriers from the junction and reverse bias it. This has the effect of blocking current from source to drain. The turn-on and turn-off processes are fast and efficient due to the low input and output capacitance of the device.

The FDB110N15A also features a high safe operating area (SOA) capability that allows it to withstand different levels of overload conditions. This provides users with an added degree of protection against any sudden or excessive current flows.

Overall, the FDB110N15A is a powerful, efficient, and reliable device that can be used in multiple different applications. Thanks to its high efficiency, low input and output capacitance, and excellent SOA capability, it is a popular device and a great choice for many industrial applications.

The specific data is subject to PDF, and the above content is for reference

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