FDB15N50 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1850pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	41nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	380 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	15A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The FDB15N50 is an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) often used in power electronic applications. It can switch high voltages and currents, and is built with a unique process technology that ensures reliable performance. This article will provide an overview of the application field and working principle of the FDB15N50.ApplicationsThe FDB15N50 is a popular choice for power management applications such as motor control, power conversion, and DC-DC converters. It is often used in applications that require low on-resistance and high power dissipation, as well as low gate charge and low switching losses. In addition, it is capable of high speed switching and fast drive characteristics. This makes it an ideal choice for motor control and high frequency switching applications.The FDB15N50 is also used in automotive applications such as ignition systems, electronic fuel injection systems, and power steering systems. Its high temperature operating range and low on-resistance make it well suited for automotive power management applications.Working PrincipleThe FDB15N50 is a type of MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. It works by using a gate voltage to control the flow of current through a channel between the source and drain terminals. When the gate voltage is low, the channel is not conductive, and the device is in the "off" state. When the gate voltage is increased, the channel becomes conductive, and the device is in the "on" state.The FDB15N50 is an N-channel MOSFET, which means that the channel of the device is composed of N-type silicon material. The N-type material has a negative charge, which creates an electric field in the channel. When a positive gate voltage is applied, the electric field is repulsed, allowing current to flow through the channel. When the gate voltage is removed, the electric field returns to its original position, and the channel is not conductive.ConclusionThe FDB15N50 is a popular power management device widely used in motor control and high frequency applications. It is an N-channel MOSFET and works by using a gate voltage to control the flow of current through a channel between the source and drain terminals. Its unique process technology ensures reliable performance and high temperature operating range.

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