FDB14N30TM Discrete Semiconductor Products

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The FDB14N30TM is a 30V 5.9 mOhm field-effect transistor (FET) from Fairchild Semiconductor. As one of the many metal-oxide-semiconductor FETs (MOSFETs) available from Fairchild Semiconductor, the FDB14N30TM offers a slew of desirable electrical and thermal characteristics for a variety of applications. In this article, we will discuss the FDB14N30TM’s application fields and its working principle.

Uses and Benefits of the FDB14N30TM

The FDB14N30TM is an ideal choice for analog and digital circuit applications, power converters and dc/dc grid systems due to its outstanding electrical performance. It offers a much higher input impedance compared to a bipolar transistor, and emits very little heat and noise due to its low gate charge. In addition, it has a very low gate resistance and a maximum drain current of 14A, making it ideal for high-powered applications. It is also a cost-effective option due to its small size.

Working Principle of the FDB14N30TM

The FDB14N30TM is a type of MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. MOSFETs are a type of transistor that uses an insulated gate to control current flow through the device. The FDB14N30TM has two terminals, the source and the drain, which are connected to a semiconductor substrate. A reverse-biased diode is formed between the source and the drain.

When a voltage is applied to the gate, a very thin depletion region is created between the source and the drain, creating a conductive path. This depletion region is controlled by the gate voltage, and allows the drain current to flow through. As the gate voltage is increased, the depletion region becomes increasingly stronger and the current flowing through the transistor increases correspondingly.

The FDB14N30TM also contains a body diode within its structure, which is formed from the p-n junction between the source and the drain. This diode allows current to flow when the drain-source voltage is negative. This particular MOSFET also features ESD protection, which helps to protect it against electrostatic discharges.

Conclusion

The FDB14N30TM is an ideal choice for high current applications due to its high drain current capability, low drain-source on-resistance, and excellent thermal performance. Its small size and low price make it a cost-effective choice for many applications. Its integrated body diode and ESD protection features make it a reliable and safe choice for many circuits. In addition, the gate-source voltage of this MOSFET allows for precise control over drain current.

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