FDB12N50TM Discrete Semiconductor Products |
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Allicdata Part #: | FDB12N50TMTR-ND |
Manufacturer Part#: |
FDB12N50TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 11.5A D2PAK |
More Detail: | N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount ... |
DataSheet: | FDB12N50TM Datasheet/PDF |
Quantity: | 800 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 165W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1315pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | UniFET™ |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDB12N50TM is a MOSFET manufactured by Fairchild Semiconductor Corporation. It is a single n-channel logic MOSFET with low on-state resistance and fast switching times. It can control power flows or be used to drive light loads such as LED displays. Its construction includes a vertical double-diffused MOS structure with an insulated gate and drain. This allows it to support a wide range of voltage from -20V to 500V.
FDB12N50TM can be used in a variety of applications. It is a common MOSFET used for motor control and for power distribution. It has a low gate-source voltage and can be used as a switch for devices with high current draw. In addition, it can be used in power management systems where the current can be controlled safely and efficiently. It can also be used for low-noise, low-dissipation, high-efficiency low-frequency conversion.
The FDB12N50TM MOSFET also has a wide range of operating temperatures. It is rated to work between -40 and 175 degrees Celsius. This makes it ideal for high-temperature and high-vibration environments. It is also capable of withstanding high power peaks and high-frequency switching. Additionally, it is relatively easy to assemble and requires only basic safety precautions.
The working principle of the FDB12N50TM MOSFET depends on its construction. In this device, electric charge is stored on the source and gate. When a gate voltage is applied to the drain, the stored electric charge is released, and a current flow is created. This current flow depends on the gate voltage and can be used to control and switch power flows.
The FDB12N50TM MOSFET is one of the best choices for controlling power in a variety of applications. Its low on-state resistance, fast switching times and multiple temperature ratings make it ideal for managing power in high-temperature, high-vibration, high-power and high-frequency environments. Additionally, it is easy to assemble and maintain, making it a great choice for both commercial and industrial projects.
The specific data is subject to PDF, and the above content is for reference
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