FDB12N50UTM_WS Discrete Semiconductor Products

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The FDB12N50UTM_WS is a low-voltage, high-current, low-energy N-Channel enhancement-mode field-effect transistor (FET) with an on-state resistance of 12 mΩ and an RDS (on) of 6 mΩ.

It is designed as a low-voltage logic-level device, with a supply voltage of 6.5 to 9.5V, and a maximum drain source voltage of 40V. The FDB12N50UTM_WS is well suited for high-speed switching applications, such as use with low voltage switching power supplies. It also has exceptional electrical isolation characteristics and low noise performance.

The FDB12N50UTM_WS operates in the enhancement mode, which means that the drain-source channel is normally closed. The \'gate\' contains a gate threshold voltage (VGS) of 3V, which is the amount of voltage required between the gate and the source for conduction to begin between the drain and source.

The device is designed primarily for applications that require high-speed switching and low-voltage operation, such as low-voltage switching power supplies, battery chargers, and high-efficiency LED lighting. Additionally, the FDB12N50UTM_WS has a low on-state resistance and can handle large currents with excellent temperature characteristics.

In addition to the main voltage and current capabilities, the device features a high-speed switching performance and low-power consumption. It has a breakdown voltage of ±200 V and a capacitance of ≤67 pF. This means that the device can handle high voltage signals with low current consumption.

The FDB12N50UTM_WS is also designed to have superior thermal resistance characteristics, allowing it to handle more current than most other transistors. It also has a low operating temperature range of -25 to 150°C and a maximum operating junction temperature of 175°C.

The FDB12N50UTM_WS is designed to be easy to use and maintain. It has a current control feature which allows the user to adjust the amount of current flowing through the device, and it also has a 0.5 amp current limiting feature. Additionally, the device is capable of handling brief periods of inversion and is designed with short-circuit protection.

The FDB12N50UTM_WS is a versatile device that can be used in a number of different applications. It is suitable for low-voltage logic-level applications such as low-voltage switching power supplies, battery chargers, and high-efficiency LED lighting. Additionally, the device can also be used in high-speed switching applications, such as use with high-speed motor and inverter applications.

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