Allicdata Part #: | FDB14AN06LA0-ND |
Manufacturer Part#: |
FDB14AN06LA0 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 67A TO-263AB |
More Detail: | N-Channel 60V 10A (Ta), 67A (Tc) 125W (Tc) Surface... |
DataSheet: | FDB14AN06LA0 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 11.6 mOhm @ 67A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 67A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FDB14AN06LA0 is a MOSFET of the n-channel enhancement mode. It has a wide range of applications in the field of electronics in various areas of control and signal applications.
The FDB14AN06LA0 has a number of features which make it an ideal choice for many electronic applications. It has an on-state drain current rating of 14A and a maximum peak current range of 46A. The maximum drain to source voltage is 600V and the power dissipation is 270W. The RDS(on) is 0.0046R.
In terms of its physical size, the FDB14AN06LA0 is a medium sized transistor, measuring just 9.7mm x 10.46mm x 1.64mm. It has a low profile single flat lead, making it suitable for applications where space is at a premium. It also has a wide operating temperature range, making it suitable for both high and low temperature operations.
The FDB14AN06LA0 is mainly used for switching applications. It is usually used for controlling the flow of current between a load and a source. It is commonly used in motor control, power conversion and other power switching applications.
The working principle of the FDB14AN06LA0 is based on the concept of the Gate control principle. This principle states that the voltage that is applied to the gate of the MOSFET will classically affect the operation of the MOSFET. When the gate voltage is above a certain threshold, the MOSFET will be in its ‘on’ state. This means that the current that passes through the device will be allowed to flow. On the other hand, when the gate voltage is below the threshold voltage, the MOSFET will be in its ‘off’ state and the current will be blocked. The MOSFET can also hold its ‘on’ state until the gate voltage is reduced.
This gate control principle is used in the FDB14AN06LA0 to control the current flow between a source and a load. When the gate voltage is above the threshold voltage, the current will be allowed to flow through the transistor and be switched on. When the voltage is reduced to below the threshold voltage, the transistor will switch off and the current will be blocked.
The FDB14AN06LA0 is a versatile and reliable transistor that has a wide range of applications. It is suitable for a variety of power switching applications due to its low profile, high current capability and wide operating temperature range. It is also widely used for controlling the flow of current in motor control, power conversion and other switching applications.
The specific data is subject to PDF, and the above content is for reference
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