FDB12N50FTM-WS Discrete Semiconductor Products

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The FDB12N50FTM-WS is a Power MOSFET that offers superior performance in a wide variety of applications. The device has an on-state resistance of just 0.034 ohms and offers EMI reduction of up to 30dB. It is a single N-channel enhancement-mode Power MOSFET that operates on a logic-level input voltage of just 3 volts.

The FDB12N50FTM-WS can handle up to 15A of continuous drain current and has a maximum drain to source voltage of 500 volts. The device is available in TO-220, D2PAK and DPAK packages and has an integrated shunt resistor for EMI reduction. In addition, the device has an integrated thermal shutdown mechanism to protect it from thermal damage. The FDB12N50FTM-WS is RoHS compliant and features optimized storage temperature range and low gate-charge.

This power MOSFET is well-suited for a variety of applications including power factor correction (PFC) controllers, motor drives, DC-DC converters, UPS systems, power supplies and automotive electronics. The device offers high performance in applications that demand high efficiency and low switching losses. Its low gate-charge offers increased power efficiency and its integrated shunt resistor helps reduce the amount of EMI noise.

The FDB12N50FTM-WS works on the principle of an insulated-gate field effect transistor (IGFET). The device has a gate electrode, which is electrically isolated from its “on” state conduction path. When the gate voltage is raised, “holes” in the region between the source and drain are created and a current is allowed to flow through the device. When the gate voltage is decreased, the holes disappear and the device becomes ‘off’. As a result, the FDB12N50FTM-WS is able to turn on and off very quickly, allowing it to be used in high-speed switching applications.

The FDB12N50FTM-WS also features an integrated thermal overload protection mechanism. This mechanism closes the pass transistor of the power MOSFET when the drain current and/or the case temperature exceed specified limits, protecting the device from thermal damage due to excessive current or temperature. In addition, the integrated shunt resistor helps reduce the amount of EMI noise.

Overall, the FDB12N50FTM-WS is a power MOSFET designed to handle up to 15A of continuous drain current in a wide variety of applications. The device has superior switching performance, low gate-charge, integrated thermal protection and integrated EMI reduction, making it well-suited for applications requiring high power efficiency and low switching loss. The FDB12N50FTM-WS provides superior performance in any application it is used in.

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