FDB150N10 Discrete Semiconductor Products

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FDB150N10 has superior performance characteristics that make it a desirable choice for a variety of applications.Specifically, it is a Field Effect Transistor (FET) with a maximum drain-source voltage of 150 volts, a maximum drain current of 10 amperes, and a lower gate-source voltage threshold making it suitable for low-side switching at 10V level.

The FDB150N10 is a single-N-Channel MOSFET, which is basically a two terminal electronic device made of semiconductor material. It is used to control the flow of current and are commonly used in power circuits, switching applications, and hybrid power designs. FETs consist of two main parts, the gate and the source. The gate is basically a third terminal that is connected to a voltage, usually 0V or Vgs. By applying a voltage to the gate of the FET, the amount of current that will flow from the source to the drain can be controlled. This device works like a switch, allowing current to pass from the source to the drain when a voltage is applied to the gate and turning off the current when the voltage is removed.

FDB150N10 is designed to handle a maximum of 10 amperes, but requires a higher gate-source voltage to switch on than most MOSFETs. Thus, it is typically used in low-side switching applications. This makes it particularly useful in any application where low voltage start-up is desired, such as in a power supplies or audio amplifiers, but it can also be used in high side switching scenarios.

In terms of its working principle, the FDB150N10 operates by controlling the current flow between the source and drain with voltage applied to the gate. Since the device is an N-Channel FET, when the gate voltage (Vgs) is below the threshold voltage, the MOSFET is off and a very small current flows due to the device’s negative bias temperature stability characteristics. When the gate voltage is increased above the threshold, the internal resistance of the FET decreases, allowing current to flow from the source to the drain.

The FDB150N10 is suitable for a variety of applications, such as power switching, audio amplifiers, and DC-DC converters. It is also an ideal choice for low-side switching applications, as its low gate-source voltage threshold makes switching easier and more efficient. It is also an attractive choice due to its low on-resistance, low threshold voltage and fast switching speeds.

In conclusion, FDB150N10 is a single-N-Channel MOSFET with superior performance characteristics. It is suitable for low-side switching applications due to its low gate-source voltage threshold. Its other advantageous features include its low on-resistance, low threshold voltage and fast switching speeds, making it a desirable choice for a variety of applications.

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