FDB1D7N10CL7

Gate Charge (Qg) (Max) @ Vgs:	163nC @ 10V
Package / Case:	TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package:	D²PAK (TO-263)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	250W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	11600pF @ 50V
Vgs (Max):	±20V
Series:	PowerTrench®
Vgs(th) (Max) @ Id:	4V @ 700µA
Rds On (Max) @ Id, Vgs:	1.65 mOhm @ 100A, 15V
Drive Voltage (Max Rds On, Min Rds On):	6V, 15V
Current - Continuous Drain (Id) @ 25°C:	268A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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The FDB1D7N10CL7 Field Effect Transistor (FET) is a type of single gate MOSFET (Metal Oxide Semiconductor FET). It is used in applications such as switching, amplification, and analog and digital signal processing. The FDB1D7N10CL7 is able to perform power switching in high frequency circuits and provide high-power amplification for signals.The FDB1D7N10CL7 is a single-gate FET with an operating temperature range from -55° to 150°C. It has a low on-resistance of 0.45 ohms max and is offered in lead-free, Halogen-free, and RoHS compliant packages. The FET has a high current rating of 3A and an avalanche rating of 14A. It can handle voltages up to 25V and its power dissipation rate is up to 0.9W. The FET has a maximum breakdown voltage of 25V and a maximum gate-source voltage of 7V.The FDB1D7N10CL7 works on the principle of field-effect transistor. In a field-effect transistor, the current flowing through the channel between a source and drain is dependent upon the voltage applied between the gate and source. This allows the FET to be used as a switch, opening and closing to control the current in a device. The FET operates by using different levels of electrical charge (the gate-source voltage) to control the flow of current through the channel.When a voltage is applied between the gate and source, it creates an electric field between the two contacts. This electric field increases or decreases the conductivity of the channel, depending on the polarity and amplitude of the voltage. When the electric field applied is greater than the threshold voltage of the FET, the channel is turned on and current flows. Conversely, if the voltage is lower than the threshold voltage, the channel is turned off and the current stops. This makes the FET perfect for switching circuits, as it can open and close quickly and efficiently, allowing for precise timing and control of current.The FDB1D7N10CL7 is available in a variety of packages and is capable of operating in both depletion and enhancement modes. Its potential for applications is virtually unlimited. It can be used for motor control, power supplies, audio amplifiers, audio switching, and more. The high current rating, low on-resistance, and superior thermal stability make it suitable for high frequency circuits such as those used in the automotive and telecoms industries. It is also used in the analog and digital signal processing space, as its adjustable current can accurately control a wide range of signals.In conclusion, the FDB1D7N10CL7 Field Effect Transistor is an extremely versatile and capable FET, ideal for a variety of applications. Its ability to control current accurately and precisely makes it an excellent choice for both analog and digital signal processing, as well as power, audio, and motor control applications. Its low on-resistance, high current rating, and wide operating temperature range all make it perfect for use in high frequency, power, and telecom circuits.

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