FDC6561AN

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FDC6561AN is a high voltage, high threshold voltage, double Gate MOSFET array produced by a leading semiconductor company, Fairchild Semiconductor. It utilizes the latest technologies to provide efficient and precise operation control. The device is available in both discrete packages and integrated circuit (IC) form factors. The FDC6561AN is capable of playing a critical role in the construction of integrated circuits and can be used as an individual component in applications such as power management, motor drive, and signal switching.

FDC6561AN Features and Benefits

The FDC6561AN features a number of impressive benefits over other types of power MOSFETs. It provides the highest voltage and threshold voltage, and utilizes advanced fabrication techniques to ensure the most reliable performance. Its double Gate MOSFET configuration allows for complete control of on-state voltage, in addition to the efficient power dissipation. Additionally, the FDC6561AN can be used as a single transistor or in an array set-up.

The FDC6561AN is particularly suited for applications where high voltage and tight control are essential. It is designed for use in high-speed switching applications such as a pulse width modulation (PWM) DC-to-DC (DC/DC) converter. It is also suitable for use in applications that require precise current control, such as motor driving and power-management ICs.

FDC6561AN Applications

FDC6561AN can be used in a variety of applications such as motor drives, power management, signal switching, and DC/DC converters. It is also well suited for use in high-randomness logic circuits. The device can withstand up to 500V, making it an ideal choice for high voltage and high power applications.

FDC6561AN Working Principle

The FDC6561AN utilizes two MOSFETs working together. The two MOSFETs have different thresholds, and when their input signals are applied concurrently, the MOSFET with the lower threshold turns on and allows the signal to pass through. When the output signal has decreased, the other MOSFET shuts off, preventing the signal from passing through. This action creates a fast switching speed and improved on-state voltage accuracy.

Conclusion

The FDC6561AN is an advanced double Gate MOSFET array designed to provide superior power and control performance. It is available in both discrete packages and integrated circuit form factors. It is ideal for applications that require high voltage, high input threshold voltage, and precise control over current. The FDC6561AN is suitable for use in motor driving, DC/DC converters, signal switching, and power management.

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