FDC655BN_NBNN007

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The FDC655BN_NBNN007 is a silicon N‐Channel enhancement mode field effect transistor (FET) in a convenient small Footprint Surface Mount package. It’s designed for low-voltage, high-performance applications, specifically for use in low-noise systems such as audio amplifiers. The FDC655BN_NBNN007 is designed to provide increased power efficiency, improved circuit reliability and greater system stability in a wide variety of applications.

Application Fields

The FDC655BN_NBNN007 is used in low-power, low-voltage applications including small power conversion and analog signal, instrumentation and circuit instrumentation, audio amplifiers, audio networks, power amplifiers, high- and low-side circuits, light control circuits, and power supplies and other industries requiring high-voltage high-current switching. In audio networks, it is particularly suitable for applications such as low-noise preamplifiers and distortion correction circuits. It is also suitable for pulse generator circuits and logic switching.

Working Principle

The FDC655BN_NBNN007 uses an N-Channel MOSFET structure to provide high performance, reliable and efficient switching for applications requiring low output impedance and high input-to-output isolation. The particular N-Channel MOSFET structure utilizes very low gate-source threshold voltage, which thereby minimizes gate leakage and loss due to switching. It also makes it possible to achieve very high levels of current control and very fast switching speeds. This transistor features a built-in protection against gate oxide breakdown.

The FDC655BN_NBNN007 utilizes N-Channel depletion mode MOSFET as its core element. In this type of structure, when the gate voltage is low, the source-to-drain channel is completely pinched off, resulting in a low on-state resistance. The built-in threshold voltage eliminates the need for a level shifting circuit which further prevents malfunctions and improves transistor reliability. At the same time, it prevents erroneous operations of the device due to voltage or current surges, or by electrostatic discharge.

The n-channel MOSFET structure gives advantages such as low power dissipation, excellent thermal performance, high saturation current, fast switching speed and low noise level. Since the gain of this transistor is low, the output is linear. It is possible to precisely control the switching of the MOSFET due to its wide temperature range with no need of an external drive circuit. The FDC655BN_NBNN007 is also very robust, with an extremely high tolerance to mechanical shock or vibrations.

The FDC655BN_NBNN007 can be used in both high- and low-side switching applications. When used in a low-side switching application, the FDC655BN_NBNN007 can act as an open drain switch, with the voltage applied to the source. When used in a high-side switching application, the FDC655BN_NBNN007 can act as an open collector switch, with the voltage applied to the gate.

In conclusion, the FDC655BN_NBNN007 is a high-performance single-channel N-Channel MOSFET which is suitable for audio applications, small power conversion, pulse switching, and other applications requiring high-current and high-voltage switching. It provides increased power efficiency, improved circuit reliability and greater system stability.

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