FDC640P_F095

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The FDC640P_F095 is a 60V N-Channel MOFSET (Metal-Oxide-Semiconductor Field-Effect Transistor). This device is a power element designed for power applications such as DC-DC converters, communications, and audio amplifiers. This application note discusses the features and characteristics of the FDC640P_F095 as well as its application field and working principle.

Features and Characteristics

The FDC640P_F095 offers superior performance in power applications due to its high current capability and low ON-resistance. It is rated for up to 9A continuous drain current, with the ability to handle up to 20A pulse drain current without additional cooling. Other key features of the FDC640P_F095 include:

• 60V Drain-Source Breakdown Voltage
• 20V Gate-Source Breakdown Voltage
• 6V Threshold Voltage
• 255m Ω @ 4.5V RDS(ON)
• 0.97A/v gfs

The FDC640P_F095 features a low profile package, making it suitable for surface mount applications. In addition, the device has an extended drain-source voltage rating, which allows for greater flexibility during design. The FDC640P_F095 also has a low gate charge, making it ideal for use in high-frequency switching circuits.

Application Field and Working Principle

The FDC640P_F095 is designed for use in a variety of power applications. It is commonly used in DC-DC converters, communications, audio amplification, LED lighting, motor control, and automotive applications. The device’s low resistance and low gate charge makes it suitable for use in high-frequency switching circuits and RF applications.

The principle of operation is based on the MOSFET\'s ability to control current flow through the channel formed between the drain and source terminals. The current is controlled by the voltage that is applied to the gate terminal, which in turn will either turn the device “on” allowing the current to flow through the channel or turn the device “off” preventing the current from flowing through the channel. This principle is utilized in many power applications to provide a precise, adjustable current flow between the source and drain.

The FDC640P_F095 is a unique device which offers an extended drain-source break down voltage, making it suitable for many power applications. Additionally, its low gate charge and low ON-resistance make it ideal for high-frequency switching circuits and RF applications.

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