FDC658P Allicdata Electronics
Allicdata Part #:

FDC658PTR-ND

Manufacturer Part#:

FDC658P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V 4A SSOT-6
More Detail: P-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount Supe...
DataSheet: FDC658P datasheetFDC658P Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT™-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FDC658P is a type of functional device commonly referred to as a Field Effect Transistor (FET). It is a type of solid state device which can be used to control electrical signals in various types of electronic circuits. It is often used in low-voltage, high-frequency applications and is often used in audio amplifiers, signal processing systems, and power supplies. FDC658P can be found in many different devices, such as digital cameras and portable music players, as well as in various other electronic applications.

FDC658P is a P-Channel FET, and has a complete package that includes a drain, gate, and source. It is evauated for operation using a single polarity of supply voltage, which is generally referred to as the voltage level at which it operates. This is generally between 5 volts and 15 volts in most applications, although this can vary depending on the exact design of the FDC658P. The drain is a current carrying device, while the gate and source are responsible for switching the current. The device is usually made with a variety of materials and construction methods, including metal oxide semiconductors, gallium arsenide and silicon on insulator.

The FDC658P works by controlling the flow of electrons between its source and drain. When a voltage is applied to the gate, a field is created that causes a current to flow through the channel formed between the source and drain. The FDC658P has a current conduction capability that is determined by the size and shape of the channel, along with the voltage and type of material used. Generally, the current will vary with the applied voltage, with the maximum allowable current determined by the power ratings of the device.

FDC658P can be used in a number of different applications, such as low-power audio amplifiers, voltage regulator modules, and switching circuits. It is often used in audio amplifiers as a gain device, as it can operate over a wide range of frequencies and be used to regulate the current levels for improved sound quality. It is also used in multiple applications for motor control, where it can be used to control the speed and direction of the motor. Additionally, the FDC658P can be used in voltage regulator circuits, as it can provide a stable voltage output for other components.

In summary, the FDC658P is a type of solid state device which can be used to control electrical signals and currents in various applications. It consists of a drain, gate and source, with the current conduction ability determined by the size and shape of the channel, along with the applied voltage and type of material. It is normally used in low-power audio amplifiers, voltage regulator circuits, switching circuits and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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