FDC6310P

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FDC6310P is a type of MOSFET array designed by Fairchild Semiconductor Corporation. It uses two N-channel MOSFETs to provide efficient switching capability and low on-resistance with embedded gate protection circuits. The FDC6310P is especially suitable in switching applications such as DC/DC converters, motor control, Class-D audio amplifiers and USB mobile charging applications. The following will explain the application field and working principle of FDC6310P.

Application Field

The FDC6310P focuses on providing MOSFET arrays in power management applications. It is a pair of high-capacitance n-channel MOSFETs which is ideal for use in DC/DC converters. The low on-resistance and paralleled design of two MOSFETs help to make the circuit more efficient, which is an excellent choice for applications that demand large current load. Additionally, it can be used in motor control, class-D audio amplifiers and USB mobile charging applications.

From its power efficiency, ESD protection and other advanced features to its low on-resistance, small package and low gate capacitance, FDC6310P can handle power management applications with power levels up to 30V and output currents of up to 30A. It has a wide range of uses, from AC/DC and DC/DC converters to brushless DC motor control and audio amplifier applications.

Working Principle

FDC6310P is a pair of parallel connected N-channel MOSFETS. These two MOSFETs are connected in such a way as to produce a controlled electric current through them. When a voltage is applied to the drain of one of the MOSFETs, the two MOSFETs will operate in parallel, allowing a relatively higher current to flow through the circuit. The lower the resistance of the FDC6310P, the higher the current will flow through the circuit.

The FDC6310P has two embedded gate protection circuits to protect the MOSFETs. The first circuit is a common gate resistor with the purpose of reducing drain to source switching time and reducing gate over voltage due to a sudden change in the gate voltage. The second circuit is a gate capacitor, which helps to reduce the ringing and increase the speed of the MOSFET. It also helps to reduce the input capacitance and reduce electromagnetic interference (EMI) between different electrical components.

The FDC6310P has an operating temperature range of -40°C~125°C and packages of Power TSSOP-8, PowerDFN-8 and PowerDFN-6, making it ideal for multi-chip applications in various applications.

To sum up, FDC6310P is an ideal choice for power management applications that require higher efficiency and, with its lower on-resistance and pervasive features such as ESD protection and parallel design, it can provide better switching performance, heat dissipation and superior system performance than other power MOSFETs.

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