Allicdata Part #: | FDC638PTR-ND |
Manufacturer Part#: |
FDC638P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 4.5A SSOT-6 |
More Detail: | P-Channel 20V 4.5A (Ta) 1.6W (Ta) Surface Mount Su... |
DataSheet: | FDC638P Datasheet/PDF |
Quantity: | 990 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1160pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 48 mOhm @ 4.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDC638P is a type of single-gate MOSFET, specifically a Power MOSFET, which is commonly used as a switching and amplifying element in electronic devices. It is one of the most versatile types of transistors, as it can be used in a variety of different applications due to its high-frequency operation and low voltage drop when switched on.
One of the most common applications of FDC638P is as a power switch device. It can be used to control power in a variety of applications including lighting systems, motor control, and AC/DC powerline applications. It is also used in a wide range of consumer electronics such as microwaves, televisions, printers and computers.
FDC638P can also be used in power supply design, as it is capable of carrying current up to 1 120W at maximum junction temperature of 175˚C, and has a maximum drain-source breakdown voltage of 375V. This makes it a suitable choice for high-power applications.
The working principle of FDC638P is based on the field-effect transistor (FET) due to which it is also called a MOSFET. The operation of a FET involves the application of a voltage between the drain and the source of the device to alter the conductivity of the device, which in turn changes the amount of current flowing through the device. The amount of voltage required to switch the MOSFET on and off is much less than in other types of transistors, which makes it ideal for applications that are sensitive to power consumption.
The switching speed of FDC638P is also much faster than other FETs, as it is capable of switching up to 3-A current at up to 100-kHz. This makes it ideal for pulse power applications, such as those used in switching power supplies and medical equipment.
FDC638P is available in a variety of packaging styles, including surface-mount packages and through-hole packages, to suit different applications. It is a relatively easy device to use, as it requires minimal additional components for operation, and is capable of providing consistent performance even at high temperature operating conditions.
The specific data is subject to PDF, and the above content is for reference
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