FDC6301N Allicdata Electronics
Allicdata Part #:

FDC6301NTR-ND

Manufacturer Part#:

FDC6301N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 25V 0.22A SSOT6
More Detail: Mosfet Array 2 N-Channel (Dual) 25V 220mA 700mW Su...
DataSheet: FDC6301N datasheetFDC6301N Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA
Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT™-6
Description

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The FDC6301N is a N-channel MOSFET Array intended for power switching applications. It consists of four independent N-channel MOSFETs arranged in a compact outline. This product is suitable for use in a variety of power conversion, switching and high-efficiency power control applications. The FDC6301N provides a high level of integration and reliability and is designed to meet the requirements of the most demanding power supplies and motor drives.

The FDC6301N features a heavily doped N-channel MOSFET within its integrated circuit design. This allows it to carry higher currents than discrete FETs, while still maintaining low on-state resistance. The FDC6301N also features a built-in gate protection circuit, which prevents damage to the FET\'s gate if the gate voltage exceeds the operating voltage. This helps ensure that the FET does not become damaged, and provides an added level of protection for the application.

The FDC6301N is typically operated in a two-terminal switching mode, with the gate connected to either the source or the drain of the device and the other terminal connected to the drain or the source. When the gate is connected to the source and the device is in the off-state, the gate of the FET is pulled to a negative potential, which prevents current from flowing through the device. When the gate is connected to the drain and the device is in the on-state, the gate of the FET is pulled to a positive potential, which allows current to flow through the device.

The FDC6301N can also be operated in a three-terminal switching mode, where a third terminal is connected to the gate of the FET, providing direct control over the current flow. This mode provides improved control over the on-off state of the FET and greatly reduces switching times. The FDC6301N is commonly used in power supplies and motor drives, as well as in high-frequency switching applications such as RF switching, high-speed data switching, and more.

The FDC6301N is also widely used in high-power switching applications, such as DC-DC converters, lighting systems, and power management systems. In these applications, the FDC6301N can be used to control the flow of power between the input and the output, enabling efficient and reliable power delivery for a wide range of applications. The FDC6301N is also well-suited for high-voltage applications, as it can be used with voltages up to 500V.

In addition to its use in power switching applications, the FDC6301N can also be used as a gate driver in motor control applications. The gate driver is used to precisely control the gate voltage of the FET, allowing for precise and accurate control over the motor speed and torque. The FDC6301N is commonly used in motor drive applications, such as stepper motor drives, DC motor drives, servo motor drives, and more.

The FDC6301N is a versatile and reliable power switching component, providing high integration and high performance in a wide range of applications. It is an ideal choice for applications requiring precise and reliable switching of power, including power supplies, motor drives, and high-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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