Allicdata Part #: | FDC638APZTR-ND |
Manufacturer Part#: |
FDC638APZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 4.5A SSOT-6 |
More Detail: | P-Channel 20V 4.5A (Ta) 1.6W (Ta) Surface Mount Su... |
DataSheet: | FDC638APZ Datasheet/PDF |
Quantity: | 920 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 43 mOhm @ 4.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDC638APZ is a general-purpose, N-type metal-oxide semiconductor field effect transistor (MOSFET). It is typically used in power supply circuits, low and high voltage circuits, and low and high current circuits.
The FDC638APZ has an extremely low on-resistance, which makes it suitable for use in applications requiring higher power and higher current switching speeds. The device can also be used when high voltage, high current or low power operation is needed.
The FDC638APZ can be used in various applications such as laptop power supplies, audio amplifiers, motor control, automotive lighting, and security systems. With its low on-resistance and fast switching capability, it can also be used in switched-mode power supplies for DC/DC converters and AC/DC converters. Additionally, it is suitable for use in low voltage boost circuits, LED lighting and LED drivers, as well as for high voltage and current applications.
The FDC638APZ works by passing electricity through the gate based on the amount of voltage received at the gate. This gate voltage is then regulated by the depletion layer, which is essentially an electron barrier that is formed at the interface between the gate and the substrate.
When the gate voltage is low, the depletion layer is thick, blocking the current from passing through and thus turning the transistor “off”. When the gate voltage is high, the depletion layer becomes thin, allowing the current to pass through and thus turning the transistor “on”.
The FDC638APZ is a reliable and cost effective device, making it a great choice for those who need to switch higher voltages and currents at a low cost. Aside from its power and current switching capabilities, it also allows for precise current regulation, meaning it can be used for more precise operation in a variety of applications.
In conclusion, the FDC638APZ is a versatile device that is suitable for a range of different applications. It has a low resistance and fast switching capability, making it ideal for power supply, low and high voltage, and low and high current applications. Its precise current regulation also makes it a great choice for those who need accurate control for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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