Allicdata Part #: | FDC658APTR-ND |
Manufacturer Part#: |
FDC658AP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 4A SSOT6 |
More Detail: | P-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount Supe... |
DataSheet: | FDC658AP Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 470pF @ 15V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 8.1nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDC658AP is a p-channel enhancement-mode Field Effect Transistor (FET) pre-assembled in a plastic TO-220-3 package. It is commonly used in various applications that require high input impedance such as switching, level-sensitive circuit controls, etc. This type of transistor also features low threshold voltage and low gate-source capacitance.
The FDC658AP consists of a p-channel depletion type MOSFET with a drain-source current rating of 2A. The FDC658AP has an on-resistance of up to 200mΩ, a drain-source breakdown voltage of 60V and a gate-source breakdown voltage of 5V. The maximum drain-source diode current and the maximum gate-source voltage are 1A and 6V respectively. This transistor can function effectively in temperatures up to 165°C.
The working of the FDC658AP is largely determined by the biasing of its gate terminal. A relatively positive voltage applied to the gate relative to the source turns the FET on, allowing current to flow from drain to source. Conversely, a more negative voltage on the gate relative to the source effectively makes the FET off, blocking current flow from the drain to the source. Furthermore, the device is designed to work well in both linear operation and switching applications.
The FDC658AP is mainly used in high speed switching circuits, motor control circuits, and temperature sensors. It is suitable for switching operations under 10 kHz and allows for operation up to 50 kHz. In particular, it can be used in voltage regulator circuits as a load switching element and a low-resistance connection element between components. This transistor also finds application in level-sensitive circuit controls, power management systems and signal conditioning systems.
Typical applications that can make use of the FDC658AP are motor speed control circuits, power supplies, DC-to-DC converters, analog circuits, LED driver circuits, and signal switching systems. Furthermore, this type of transistor can also be used for signal amplification and signal conditioning in circuit designs that involve short pulses of high-frequency signals, as well as for static on/off switching in low-noise amplifiers. All in all, the FDC658AP is a versatile FET capable of providing reliable performance in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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