Allicdata Part #: | FDC655AN-ND |
Manufacturer Part#: |
FDC655AN |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 6.3A 6-SSOT |
More Detail: | N-Channel 30V 6.3A (Ta) 1.6W (Ta) Surface Mount Su... |
DataSheet: | FDC655AN Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 830pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 6.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FDC655AN Application Field and Working Principle
The FDC655AN is a specialized mosfet (metal–oxide–semiconductor field–effect transistor) that has a variety of uses in modern electronic circuits. It is widely used in automotive, industrial and consumer electronics applications, and has some unique characteristics that make it an ideal choice in many cases.
The mosfet is a type of transistor, but is differentiated from the standard bjt (bipolar junction transistor) by its ability to be turned on and off directly by an electrical signal on its gate, rather than through electrical current in the controlling circuit. This opens up a wide range of potential applications for the FDC655AN by allowing it to act as a switch, or to be enabled or disabled as needed.
The FDC655AN is a special type of mosfet, called a Enhancement-Mode MOSFET (EMOSFET). This type of mosfet is normally off, and must have an appropriate amount of voltage applied to the gate before it will turn on. This makes it ideal for use as a switch in digital circuits, as the mosfet will only be switched when an appropriate voltage is present.
The FDC655AN has a VGS (gate to source voltage) of 16V and a drain source saturation voltage (VDSS) of 40V. When operating in the enhancement-mode, the threshold voltage is typically 4V and the on-resistance is typically 150mΩ.
The FDC655AN is capable of handling up to 6A of continuous current and can dissipate up to 24W of power. Additionally, it has low parasitic capacitance of 0.4pF-1.3pF and a low gate charge of11µC-13µC which improve the FET switch transition time.
The FDC655AN is also designed for use in environments where there may be heavy noise, and has a built-in ESD (electrostatic discharge) protection circuit to protect it from damaging electrical signals.
The FDC655AN is a versatile mosfet with a wide range of applications. It can be used in digital circuits as a switch, or as a current or voltage regulator, or in other applications that require a mosfet with low drain source saturation voltage and high current handling capabilities. It is also ideal for use in noise sensitive circuits as it has built-in ESD protection.
The specific data is subject to PDF, and the above content is for reference
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