FDC655BN

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FDC655BN is a single N-channel enhancement mode power MOSFET which is developed to minimize the on-state resistance. It uses advanced Planar stripe and DMOS technology resulting high packing density and extremely low on-state resistance. It also features superior rated drain-source breakdown voltage of 600V. This power MOSFET also has good gate charge and excellent switching performance in order to provide maximum efficiency.

FDC655BN has a wide range of applications including industrial power conversion, automotive power systems and medical power supplies. It is suitable for multiple power applications such as motor drivers, switching power supplies, high power SCR applications, load switching and DC/DC converters. It is also used in many other industrial applications such as uninterruptable power supply, battery charger, high current switching and more.

The working principle of FDC655BN is as follows. It uses an insulated-gate field-effect transistor (IGFET), which is the simplest type of field-effect transistor. It consists of a channel of n-type or p-type semiconductor material, through which a current can flow when an electric field is applied across it. The electric field is created by applying a voltage between the source and drain terminals. The voltage between the gate and source terminals also modulates the channel current by increasing or decreasing the electric field.

The FDC655BN feature drain-source breakdown voltage of 600V, drain current up to 145A, on-state resistance of < 0.06 ohms, capacitance of 79nC, maximum pulse width of 13 μs and maximum drain-source switching time of 100ns. It also features superior rated drain-source breakdown voltage and fast on-state switching characteristics. It is suitable for high voltage applications, providing maximum efficiency and low on-state resistance for the end user.

In conclusion, FDC655BN is an efficient and reliable power MOSFET offering superior rated drain-source breakdown voltage and fast on-state switching capabilities. It is suitable for a wide variety of applications such as motor drivers, switching power supplies, load switching, high current switching and more. With its superior rated drain-source breakdown voltage and fast on-state switching capabilities, FDC655BN is a great choice for those looking for a reliable power MOSFET.

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