FDC6312P Allicdata Electronics
Allicdata Part #:

FDC6312PTR-ND

Manufacturer Part#:

FDC6312P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2P-CH 20V 2.3A SSOT-6
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 2.3A 700mW Sur...
DataSheet: FDC6312P datasheetFDC6312P Datasheet/PDF
Quantity: 12081
Stock 12081Can Ship Immediately
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT™-6
Description

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The FDC6312P is a field effect transistor (FET) array. It includes 12 N-channel enhancement mode FETs with the same gate-source voltage range, maximum drain current, and maximum drain source voltage, n-channel FETs are a type of FET which passes current more easily in one direction than the other direction. The FDC6312P array is usually used in applications such as power management and relay logic where the FETs are used in a series or parallel configuration to control higher current flows and voltages through the circuits.

The FDC6312P works by acting as a switch to control the electricity flow in a circuit. It has two terminals - the source and the drain. A small voltage applied to the gate terminal (which is the control input) controls a larger voltage through the channel created between the source and the drain. This is because the channel is filled with an electrically chargeable material that allows current to run through it when an external voltage source is applied. The gate terminal controls the amount of voltage that can pass through the channel and thus controls the current flow through the circuit.

The FDC6312P FET array is an example of a sigma-delta type MOSFET (Metal–Oxide–Semiconductor Field Effect Transistor) array. Sigma-delta type devices are simpler than their 4-terminal counterparts because they only have three terminals - the drain, the source, and the gate. This simplifies the design and allows manufacturers to reduce the size and cost of the device.

The FDC6312P has several advantages over conventional transistors and FETs. It has low voltage drop, low leakage current, high electrical resistance, and the ability to withstand extreme temperature environments. This makes it an ideal choice for applications where high power loads and high temperatures are expected. It is also very reliable and has a long lifetime, making it an excellent choice for use in many industrial, automotive, and military applications.

The FDC6312P can be used in many different applications. Its low voltage drop and high electrical resistance makes it suitable for high power loads such as motor control, power supplies, and relays. Its ability to withstand extreme temperatures makes it suitable for use in military, aerospace, and medical systems that require extremely high temperatures. And its low leakage current and high reliability makes it an ideal choice for telecommunications systems.

In conclusion, the FDC6312P is a versatile and reliable FET array which can be used in many different applications where high power, high temperatures, and high reliability are required. It has a low voltage drop, low leakage current, and is able to withstand extreme temperature environments. It is an ideal choice for many industrial, automotive, and military applications.

The specific data is subject to PDF, and the above content is for reference

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