FDMD8240LET40 Allicdata Electronics

FDMD8240LET40 Discrete Semiconductor Products

Allicdata Part #:

FDMD8240LET40TR-ND

Manufacturer Part#:

FDMD8240LET40

Price: $ 0.99
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 40V 24A POWER3.3X5
More Detail: Mosfet Array 2 N-Channel (Dual) 40V 24A 50W Surfac...
DataSheet: FDMD8240LET40 datasheetFDMD8240LET40 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.90971
Stock 1000Can Ship Immediately
$ 0.99
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24A
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Supplier Device Package: 12-Power3.3x5
Description

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The FDMD8240LET40 transistor array is a device with a wide range of possible applications. This device is composed of a power MOSFET and an onboard driver, allowing for increased efficiency, flexibility and safety during operation.

The FDMD8240LET40 is commonly used in a variety of power management and switch mode power supplies, acts as a bridge rectifier, and can also be applied in solar and alternative energy systems, automotive motor control systems, as well as LED and HID lighting systems.

This device features 8 power MOSFETs arranged in two four-channel parallel half bridges, as well as 6 drive MOSFETs. This arrangement allows for a considerable power rating, offering a wide range of power modes and a variety of gate drive options.

The FDMD8240LET40 operates at a voltage range of -60 V (max) to +60 V (max) and supports high current applications. It is rated to support 2.5 A peak current and has a total on-state resistance of 1.1 mΩ. The operating temperature range is -40°C to 125°C, making it suitable for high power/high temperature applications.

The working principle of the FDMD8240LET40 is based on the concept of electrical shielding, which allows single channel current control and the use of low voltage increases the efficiency and lifetime of the switch. These devices employ an onboard driver which is used to activate the power MOSFETS and switch them on or off. When the driver is activated, the power MOSFET is switched on allowing it to conduct current between the two connected terminals. When the driver is inactivated, the MOSFET is switched off, preventing it from conducting current.

The FDMD8240LET40 array offers many advantages such as improved performance, increased safety, lower power consumption, increased power rating and improved power management. In addition, the onboard driver and integrated array reduce the system complexity and provide cost savings.

Overall, the FDMD8240LET40 transistor array is an ideal device if you are looking for a highly reliable device with a wide range of applications. It provides a robust design, improved performance, increased safety, lower power consumption and improved power management, and it can be used in a wide range of power management and switch mode power supplies, as well as a variety of other applications.

The specific data is subject to PDF, and the above content is for reference

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