Allicdata Part #: | FDMD8540LTR-ND |
Manufacturer Part#: |
FDMD8540L |
Price: | $ 1.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 40V 33A POWER |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 40V 33A, 15... |
DataSheet: | FDMD8540L Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 1.46841 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 33A, 156A |
Rds On (Max) @ Id, Vgs: | 1.5 mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 113nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 7940pF @ 20V |
Power - Max: | 2.3W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-Power 5x6 |
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The FDMD8540L is a power MOSFET array that has been widely employed in many electronics applications. It is one of the more popular devices for use in a variety of applications, ranging from power supply, to digital and analog signal processing, to the control of the power devices that drive motors, LEDs, and other electronics devices. The FDMD8540L is a multi-channel device, consisting of three separate MOSFETs - an N-channel device, an S-channel device, and an output buffer.
The N-channel MOSFETs in the FDMD8540L are the primary components that provide amplification of the signal when it is gated with an input. They are arranged in a symmetrical cascading topology, which minimizes voltage and current losses, and increases signal gain. The S-channel device is used for buffering and current limiting. It is also used to reduce noise and power dissipation, making the FDMD8540L more efficient and reliable in operation.
The FDMD8540L can be used in a variety of applications, ranging from power supply to signal processing and robotics. In power supply applications, the FDMD8540L is often used in a manner similar to a synchronous buck converter, in which the voltage applied to the input is reduced to a lower level before it is applied to the load. This is beneficial in that it reduces power consumption and increases efficiency.
In terms of signal processing, the FDMD8540L can be used in applications such as RF transmitters and receivers, where it is used to boost and refine the signal before it is sent. This is accomplished by applying a negative voltage to the input of the FDMD8540L, and then using the output to modulate the signal. In addition, the FDMD8540L is used in the control of motor drivers, where its unique combination of low drop-out voltage and low power consumption make it ideal for these applications.
In terms of robotics, the FDMD8540L is used in applications that involve the control of multiple motors and actuators. For example, it can be used in robotic arms to control the rotation and movement of the arms in a more precise manner. The FDMD8540L is also used in applications such as 3D printers, where it is used to control the movement of the print head.
The primary difference between the FDMD8540L and other MOSFET arrays is the buffer stage. The buffer stage helps to keep the signal distortion to a minimum and helps to reduce power losses in the device. The buffer stage is also beneficial in robotics applications, as it helps to reduce the noise generated by the motors.
In terms of operation, the FDMD8540L is based on the common source and gate voltage driver principle. This means that an input voltage is applied to the drain, and a corresponding gate voltage is applied to the source node. This creates an amplifier stage, where the Gate Voltage controls the flow of current in the channel. Furthermore, the voltage applied to the gate is regulated with the help of a logic circuit, which helps to ensure that the correct amount of current will flow through the channel for optimal signal gain.
The FDMD8540L is an excellent, reliable, and energy efficient device for many electronics applications. Its cascading, symmetrical MOSFET structure provides excellent signal gain, and its buffer stage helps to reduce both noise and power consumption. Additionally, its wide variety of applications make it a popular choice for many electronics applications ranging from power supply to signal processing.
The specific data is subject to PDF, and the above content is for reference
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