| Allicdata Part #: | FDMD85100TR-ND |
| Manufacturer Part#: |
FDMD85100 |
| Price: | $ 1.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET 2N-CH 100V |
| More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 100V 10.4A ... |
| DataSheet: |  FDMD85100 Datasheet/PDF |
| Quantity: | 3000 |
| 3000 +: | $ 1.02689 |
| Series: | PowerTrench® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Half Bridge) |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 10.4A |
| Rds On (Max) @ Id, Vgs: | 9.9 mOhm @ 10.4A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2230pF @ 50V |
| Power - Max: | 2.2W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | 8-Power 5x6 |
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The FDMD85100 is a monolithic integrated circuit consisting of six field-effect transistors configured in an array arrangement. It is constructed using Fairchild’s proprietary advanced power MOSFET technology and is designed to optimize its performance capabilities. The three N-Channel transistors are optimized to provide low on-resistance and fast switching times, while the three P-Channel transistors are designed to provide low on-resistance and low gate-source threshold voltages. In addition, the device provides integrated ESD (electrostatic discharge) protection, eliminate the need for external ESD clamps.
The FDMD85100 offers a wide range of advantages over discrete transistors in terms of size, cost and performance. The device utilizes an integrated circuit design, which allows for a smaller form factor, thereby increasing overall efficiency when compared to a conventional discrete transistor array. In addition, the device’s use of advanced power MOSFET technology allows for greater power handling capabilities when compared to conventional discrete transistors, making it ideal for high-power applications.
The working principle of the FDMD85100 is simple but effective. The device is essentially an array of field-effect transistors which are connected in a cascaded arrangement. Each transistor has a source (S), gate (G) and drain (D) lead. When a voltage is applied to the gate lead of a transistor, a current can flow between the source and drain leads, allowing the transistor to act as a switch.
When the voltage is applied to the gate of the N-Channel FETs, current is allowed to flow from the drain to the source, making the transistor enter the “on” state. Conversely, when a voltage is applied to the gate of the P-Channel FETs, current is allowed to flow from the source to the drain, making the transistor enter the “off” state. By cascading the six transistors in the FDMD85100 together, it is possible to use them as an array of switches which can be used to control the flow of current in various applications.
The FDMD85100 offers several advantages over conventional discrete transistors. The integrated circuit design allows for a smaller form factor, while the use of advanced power MOSFET technology allows for greater power handling capabilities. In addition, the device provides integrated ESD protection, eliminating the need for external clamps. Finally, the cascaded array of transistors can be used to control the flow of current in a variety of applications, making this device an ideal solution for high-power, high-speed applications.
The specific data is subject to PDF, and the above content is for reference
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