Allicdata Part #: | FDMD8440L-ND |
Manufacturer Part#: |
FDMD8440L |
Price: | $ 1.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | FET ENGR DEV-NOT REL |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 21A (Ta), 87A ... |
DataSheet: | FDMD8440L Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 1.37012 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Ta), 87A (Tc) |
Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 4150pF @ 20V |
Power - Max: | 2.1W (Ta), 33W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | Power 3.3x5 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
,The FDMD8440L is a high performance, low gate charge Vertical DMOSFET array designed to replace two discrete MOSFETs with a single device. It integrates two vertical DMOSFETs, with each FET having an independent gate control region, resulting in two independent and fully isolated current channel paths with no internal connection. This capability makes the FDMD8440L ideal for those applications which require easy access to both current channels.
The FMDD8440L’s exceptional performance and high current handling capability make it well suited for a variety of applications. It provides a low on-resistance allowing high switching and conduction capabilities, enabling designers to save power. Its low gate charge also makes it particularly well suited for high frequency applications. The device’s integrated bi-directional protection ensures low-loss operation in both directions when using the P-channel configuration.
The FDMD8440L’s working principle is based on the use of vertical double diffused metal oxide semiconductor field effect transistors (VDMOSFETs). A vertically stacked, double-diffused source, gate, and drain structure is formed on an active chip. The gate is activated by externally applied signal voltages, controlling the device conductivity.
The device’s two independent and fully isolated current channels allow it to be used in many different kinds of applications. In voltage conversion applications, the FDMD8440L is used to control the flow of current in two directions, with each channel providing bi-directional protection. It is also used in power supplies and inverters. In these applications, it can provide the necessary protection against overvoltage and overcurrent conditions.
The FDMD8440L also excels in power management applications, where its bi-directional capability allows it to manage the distribution of power and to provide overload protection. Its low on-resistance and low gate charge also make it attractive for automotive applications, where it can provide optimal motor control. In motor drive applications, the FDMD8440L can efficiently control the power flow over two independent channels.
The FDMD8440L is a versatile device that can be used in a wide range of applications. Its dual current channel capability and low on-resistance make it an excellent choice for high frequency, voltage conversion and power management applications. Its integrated low loss protection makes it well suited for automotive applications. It is an excellent solution for designers looking to reduce component count and improve efficiency in their designs.
The specific data is subject to PDF, and the above content is for reference
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