FDMD8260L Discrete Semiconductor Products |
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Allicdata Part #: | FDMD8260LTR-ND |
Manufacturer Part#: |
FDMD8260L |
Price: | $ 1.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 60V 6-MLP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 15A 1W Surface... |
DataSheet: | FDMD8260L Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 1.05580 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 15A |
Rds On (Max) @ Id, Vgs: | 5.8 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 5245pF @ 30V |
Power - Max: | 1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 12-PowerWDFN |
Supplier Device Package: | 12-Power3.3x5 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDMD8260L is a high current and low on-state resistance MOSFET array designed to be used in a variety of applications. It is a four-stage MOSFET with a switchable drain-to-source voltage. The FDMD8260L offers high current load-switching performance in a "1x1" package form factor. It uses a floating depletion-mode metal-oxide semiconductor field-effect transistor (FET) array construction which gives it very low on-state resistance (RDS(ON)).
The main application field for the FDMD8260L is in power supplies and in automotive and industrial equipment. It is also commonly used to switch current in control software applications, such as controlling the speed of DC motors and for heating, ventilation and air conditioning systems. In addition, it can be used to drive high-power LEDs for display and lighting applications. The FDMD8260L is also used for ballast systems, output monitoring and energy storage.
The FDMD8260L has a variety of working principles. Firstly, its floating depletion-mode FET array construction gives it a very low RDS(ON) (which is the resistance between the drain and the source of the device). This low RDS(ON) allows the device to switch current to and from load with minimal losses. Secondly, the device has an integrated resistor which can be used to monitor the load current in order to provide feedback to the control software or other monitoring equipment. Finally, the device has a switchable drain-to-source voltage which allows it to be biased in its on or off state.
The FDMD8260L has a variety of features that make it suitable for use in a range of applications. It has a low RDS(ON) which means that it has low power losses when switching current. It has an integrated monitor resistor for feedback to the control software. Finally, it has a switchable drain-to-source voltage which allows it to be biased in either on or off states.
In conclusion, the FDMD8260L is a high current, low on-state resistance MOSFET array which is designed to be used in a variety of applications. It is suitable for use in power supplies, automotive and industrial equipment, control software applications, high power LEDs and ballast systems. The FDMD8260L has a low RDS(ON), an integrated resistor for monitoring load current and a switchable drain-to-source voltage. These features make it highly suitable for many applications.
The specific data is subject to PDF, and the above content is for reference
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