
Allicdata Part #: | FDMD8260LET60TR-ND |
Manufacturer Part#: |
FDMD8260LET60 |
Price: | $ 1.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 60V 15A |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 15A 1.1W Surfa... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 1.16131 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 15A |
Rds On (Max) @ Id, Vgs: | 5.8 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 5245pF @ 30V |
Power - Max: | 1.1W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 12-PowerWDFN |
Supplier Device Package: | 12-Power3.3x5 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDMD8260LET60 is a depletion-mode MOSFET array, implemented as a three-terminal device. These devices are typically used in a wide range of applications, such as switching, regulating, amplification, filtering and more due to their low voltage operation. The device is especially suited for use in high-frequency power management, audio and video applications as it offers excellent performance characteristics and reliability.
The part number FDMD8260LET60 is a discrete dual package that consists of two pieces, each one containing two FETs with a common source terminal. The FDMD8260LET60 has two drain terminals, one for each FET, and one gate terminal. The device can be used to perform logic functions in combination with other digital and analog components. The FETs can be used as switches, amplifiers, level shifters, current sources, etc.
The FDMD8260LET60 has an input voltage range from −2V to −20V, making it suitable for use in low voltage applications. There is a maximum drain-source voltage of 16V. The peak drain current of each FET is 800mA, and each FET has a gate-to-source capacitance of 4.4pF, which helps reduce noise interference. The maximum operating temperature range is between –55°C and 125°C.
Working Principle
The FDMD8260LET60 is a depletion mode MOSFET array. It operates by using the MOSFET gates to control the flow of current through the FETs. When the gate voltage is low, the drain current is off, but as the gate voltage is increased, the source-drain current increases exponentially. As the source-drain current increases, the drain-source voltage decreases, which ultimately results in a voltage drop between the drain and the source. This voltage drop is what helps the FDMD8260LET60 perform its various operations.
The FDMD8260LET60 is highly reliable and offers excellent performance characteristics in terms of switching speed, linearity, and noise immunity. These features make it an ideal choice for high frequency applications as it can provide reliable operation in demanding environments.
The FDMD8260LET60 is a versatile device that can be used for a variety of applications. It can be used as a switch, amplifier, level shifter, current source, or other applications.
In conclusion, the FDMD8260LET60 is a versatile MOSFET array. It is suitable for use in high-frequency power management and audio/video applications and offers excellent reliability and performance characteristics. With its wide voltage range and low heat operation, the FDMD8260LET60 is an ideal choice for a variety of applications.
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