FDMD8580 Discrete Semiconductor Products |
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Allicdata Part #: | FDMD8580TR-ND |
Manufacturer Part#: |
FDMD8580 |
Price: | $ 1.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 80V 16A POWER 5X6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 80V 16A (Ta), 82A ... |
DataSheet: | FDMD8580 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 1.08914 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 82A (Tc) |
Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 5875pF @ 40V |
Power - Max: | 2.3W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | Power56 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDMD8580 is an integrated circuit used for consumer electronics such as mobile phones, personal digital assistants (PDAs), and portable media players. It is a single field-effect transistor array with a total of nine transistors. It is produced by SST and manufactured using a CMOS technology. This integrated circuit is ideal for use in low-power, space-constrained applications.
The FDMD8580 is mainly used to switch between signal paths. It is commonly used in analog signal routing circuits such as audio mixers, radio receivers, and video switching networks. It can also be used in digital systems that perform low-level control functions such as monitoring temperatures, communication systems, and power surges.
The FDMD8580 consists of an array of nine field effect transistors (FETs). Each of the FETs has its own gate, source, and drain. The gate is the terminal that is used to control the flow of current through the FET, and the source and drain are the terminals that bring the current in and out of the FET, respectively. When a voltage is applied to the gate, it produces a depletion layer that effectively turns off current flow through the device.
The FDMD8580 follows a simple design principle known as an open drain circuit. An open drain circuit consists of a single output terminal and multiple input terminals connected to the output terminal by an individual FET. With the FDMD8580 it is the output terminal. If the gate of any of the FETs is left open, the output pin will remain low. If the gate of any FET is connected to a voltage, the output pin will go high and the other FETs will become disabled.
There are several advantages to using the FDMD8580 in consumer electronic designs as opposed to traditional discrete components. It is smaller than discrete components, reducing the overall size of the circuit, and it is also more economical. In addition, it uses less power, which makes it ideal for portable devices. Finally, it eliminates the need for additional components, reducing the complexity and cost of the circuit.
The FDMD8580 is an ideal solution for applications in the consumer electronics industry such as mobile phones, PDAs, and portable media players. Its simple design and low power consumption make it a good choice for these types of devices. Additionally, its small size and low cost can help reduce the overall complexity and cost of the circuit. It is an excellent choice for low-power, space-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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