FDMD8280 Discrete Semiconductor Products |
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Allicdata Part #: | FDMD8280TR-ND |
Manufacturer Part#: |
FDMD8280 |
Price: | $ 1.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 80V 11A 6-MLP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 80V 11A 1W Surface... |
DataSheet: | FDMD8280 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 1.00415 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 11A |
Rds On (Max) @ Id, Vgs: | 8.2 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 3050pF @ 40V |
Power - Max: | 1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 12-PowerWDFN |
Supplier Device Package: | 12-Power3.3x5 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDMD8280 is a type of power MOSFET array which is a type of transistor used to control current flow in a circuit. It is a member of the FDMD (Field Effect Transistor array) family. The FDMD8280 is an 8-way differential array with a total of 16 N-channel MOSFETs, 8 P-channel MOSFETs and a wide array of options. It has been commonly used in applications requiring high power density, such as automotive and industrial power supplies, and provides users with the flexibility of selecting from a wide range of Vds and Rds ratings.
Working Principle
The FDMD8280 is a non-isolated power MOSFET array. The N-channel MOSFETs are arranged in groups of two and are used for switching. Each group has a dedicated common-source node which is connected to one of the optional sources. The P-channel MOSFETs are used for sensing and provide isolation between the various switching nodes. The N-channel devices are controlled by independent gate drive signals while the P-channel devices are controlled by a combined source. The two groups of MOSFETs are connected to their respective control and feedback pathways in order to control the current flow through them. This allows for efficient and reliable power MOSFET array switching.
Features and Benefits
The FDMD8280 has many features and benefits that make it an ideal choice for a variety of applications. It has a wide range of options and a range of low VDS and RDS ratings which can be used to implement efficient switching. In addition to the low VDS and RDS ratings, the FDMD8280 also features an asymmetrical channel design for low channel temperature and improved temperature stability. It also features low gate charge and high ruggedness for increased reliability. Furthermore, it has integrated gate protection which helps to prevent accidental damaging of the MOSFETs.
Applications
The FDMD8280 MOSFET array is used in a wide variety of applications including automobiles, industrial power supplies, LED lighting, power management systems, telecom, motor drive, and renewable energy systems. As an automotive component, it is capable of handling high currents without becoming overloaded. It is also able to provide optimal current performance while operating at very low RDS. Furthermore, it is a cost-effective solution for industrial applications because it provides great savings on power consumption. In telecom applications, the FDMD8280 is used to switch high power signals using its low VDS rating. In motor drive applications, it is used to switch high frequencies signals to provide greater control and accuracy. In LED lighting applications, the FDMD8280 is used to minimize power loss and control current for efficient operation. In power management systems, it is used to provide reliable voltage and current regulation.
Conclusion
The FDMD8280 MOSFET array is a versatile component which has been used in a variety of applications. It has a wide range of options and a range of low VDS and RDS ratings which make it an optimal choice for most applications. It is also cost-effective and can provide power savings in application. Furthermore, the integrated gate protection helps to prevent accidental damage of the MOSFETs and makes the FDMD8280 an even more reliable solution for most applications.
The specific data is subject to PDF, and the above content is for reference
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