Allicdata Part #: | FDMD8430-ND |
Manufacturer Part#: |
FDMD8430 |
Price: | $ 1.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | FET ENGR DEV-NOT REL |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Source 30V ... |
DataSheet: | FDMD8430 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 1.37012 |
Series: | PowerTrench® |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Common Source |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Ta), 95A (Tc) |
Rds On (Max) @ Id, Vgs: | 2.12 mOhm @ 28A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 5035pF @ 15V |
Power - Max: | 2.1W (Ta), 29W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-PQFN (3.3x5) |
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The FDMD8430 is a field-effect transistor (FET) array, which is composed of two N-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) in a single package. As a MOSFET array, the FDMD8430 is designed to improve the performance of analog circuits, with very high current-handling capacity for power switching applications. This makes it a popular choice for many types of circuit designs.
An Overview of the FDMD8430
The FDMD8430 is a dual-channel, high-voltage MOSFET array, specifically designed to switch heavy loads in power-modulated circuits. It is an open-drain device, which means it removes power at the source, or ground, and can be used to drive other components of the circuit. It is designed to work with an IC supply voltage of 5 to 10Vdc, an MOSFET voltage of -2 to -7Vdc, and operate at a current rating of up to 50 Amps.
Applications of the FDMD8430
The FDMD8430 is a powerful tool for design engineers and circuit designers who require precise and reliable power control in their circuits. It has a variety of applications, including in motor control circuits, power converters and power amplifiers. It is commonly used in automotive electronics, consumer electronics, audio equipment, instrumentation and home appliances. The device can also be used in power switching, motor speed control and voltage regulation applications.
Working Principle
The FDMD8430 works on the principle of field-effect transistors, where a gate terminal controls the flow of current through a semiconductor channel. As power is applied to the gate, a barrier or pinch-off effect is created that redirects the current away from the channel. This allows the current to be accurately modulated and controlled. The N-channel FDMD8430 can switch up to 50 Amps at a peak-drain source voltage of up to 10V.
The FDMD8430 also uses thermal protection, which limits its peak-drain source voltage to 10V, preventing it from overheating or burning out. It also has a built-in ESD protection circuit, which helps to protect the device against electrostatic discharge damage. The FDMD8430 is a versatile, low-cost device, offering reliable performance and a wide range of applications.
Conclusion
The FDMD8430 is a powerful and reliable FET array, specifically designed for high-current and voltage power switching applications. It offers design engineers a low-cost solution for controlling and modulating current in their circuits. With its built-in thermal and electrostatic protection, the FDMD8430 is an ideal choice for a wide range of applications, including automotive electronics, consumer electronics, audio equipment, instrumentation, and home appliances.
The specific data is subject to PDF, and the above content is for reference
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