FDMD86100 Discrete Semiconductor Products

Series:	PowerTrench®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual) Common Source
FET Feature:	Standard
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	10A
Rds On (Max) @ Id, Vgs:	10.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	2060pF @ 50V
Power - Max:	2.2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-Power 5x6

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FDMD86100 Application Field and Working Principle

The FDMD86100 is a type of field effect transistor (FET) array which is used for signal amplification in commercial and industrial applications. It is an integrated-circuit fabrication technology which employs MOSFETs and make of these arrays particularly suitable for signal amplification and signal control.A field effect transistor is a type of transistor which has four terminals. These devices function using the field effect principle wherein a voltage applied to one of the terminals affects the current that flows through the other three. MOSFETs are a type of field effect transistor which use an insulated gate electrode in lieu of a steady current or voltage. This insulated gate allows the transistor to function at lower voltages, resulting in greater efficiency and power savings. The FDMD86100 consists of 24 pairs of FETs with two gates for each transistor. These transistors are arranged in a matrix form and can be used for any application where a large number of MOSFETs are needed. The main benefit to using this type of array is that it allows for a highly integrated design which can reduce the overall number of components and power that is needed by the circuit.The FDMD86100 has a wide range of applications in the fields of commercial and industrial signal amplification and signal control. Its primary purpose is to operate at lower voltages while providing very high levels of current; this makes it an ideal choice for controlling high current loads as well as stabilized power conversion. Its integrated design also makes it well suited for miniaturized electronics circuits as well as embedded systems where space is limited.The basic working principle behind the functioning of the FDMD86100 is that it functions as a two stage amplifier. The transistor\'s internal structure allows it to operate at low voltages while still providing very high levels of current control. When a voltage is applied to the control gate, the current flow through the drain and source is controlled by a field effect. This means that for a given voltage input, a much higher current output can be achieved. Each pair of FETs in the device can be used in this manner to amplify a single signal.In terms of practical applications, the FDMD86100 can be used in a multitude of different systems. Its suitability for low voltage applications makes it a great choice for embedded systems, automotive and industrial applications. This type of FET array can also be used in audio or video applications, or to help stabilize the voltage supply of a system. Its robust and integrated design makes it an ideal choice for any system where power efficiency and space saving is a priority.Overall, the FDMD86100 is a highly versatile and efficient FET array which is suitable for a wide range of applications. Its ability to operate at lower voltages while still providing high current control make it a great choice for the latest generation of embedded systems, automotive and industrial applications. Its integrated design also makes it ideal for miniaturized system designs. This type of FET array can help improve the power efficiency and system stability of these devices.

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