FDMD8680 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDMD8680 is a type of n-channel logic levelmetal oxide semiconductor field-effect transistor (MOSFET). A MOSFET operates by controlling the flow of electrons through a channel between two terminals, the source and the drain, using an electric field created by a gate terminal. This MOSFET is designed for use in industrial, consumer, and automotive power management applications, as well as high-performance switching applications.

In a typical MOSFET structure, the gate (or control) electrode is separated from the channel region by an insulator gate oxide layer. Electrons are then injected into the channel region by applying voltage to the gate, creating an inversion layer. This allows for current to flow only in the channel area that is affected by the electric field of the gate voltage. Therefore, the current conduction in the channel region is primarily determined by the gate voltage, allowing the device to act as a switch.

The FDMD8680 is a logic level MOSFET, meaning that it is designed to operate at low gate voltage levels, typically in the range of 3V to 5V. This is achieved by utilizing a high-density metal metal-oxide-semiconductor (DMOS) structure, which ensures that the device remains operational even at extremely low gate voltage levels (<3V). This allows the device to operate with reduced power consumption and increased switching speed, making this MOSFET ideal for high-speed, low-voltage applications.

One of the main benefits of using the FDMD8680 MOSFET is its low on-resistance. The device\'s on-resistance value is as low as 7Ω, which allows for efficient and precise power management. Additionally, the device can handle a continuous drain to source current of 8A, making it suitable for switching applications that require high power handling.

The FDMD8680 is also designed with an integrated circuit protection feature, which prevents current flow and voltage overshoot, providing safety and reliability to the system. This MOSFET also offers built-in electrostatic discharge (ESD) protection and an over-temperature protection feature, ensuring that the device is protected against impacts due to external manipulation or ESD events, and temperature changes.

The FDMD8680 is an ideal choice for applications that require low gate voltage and high precision power management. It is particularly useful for power management in industrial, consumer, automotive, and high-performance switching applications. The device is also available in a package of 24, allowing for the integration of multiple transistors in a single chip. This design allows for smaller board footprints, reducing development time and overall system cost.

The specific data is subject to PDF, and the above content is for reference