FDMD8630 Allicdata Electronics
Allicdata Part #:

FDMD8630-ND

Manufacturer Part#:

FDMD8630

Price: $ 2.38
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 30V 38A POWER5X6
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 38A (Ta), 167A...
DataSheet: FDMD8630 datasheetFDMD8630 Datasheet/PDF
Quantity: 1000
3000 +: $ 2.16807
Stock 1000Can Ship Immediately
$ 2.38
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 167A (Tc)
Rds On (Max) @ Id, Vgs: 1 mOhm @ 38A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9930pF @ 15V
Power - Max: 2.3W (Ta), 43W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power 5x6
Description

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The FDMD8630 is an array of metal oxide-silicon field effect transistors (MOSFETs) designed to provide cooling, humidity control, and assistance other environmental control tasks. MOSFETs are a type of semiconductor that act like a switch to control the amount of current flowing through them. This device is specifically designed to improve response time, reduce system costs, and improve thermal performance. As a result, it is well-suited for applications such as hot-water systems, refrigerators, AC systems, and many other energy-management systems.

The FDMD8630 includes three MOSFETs in a single package. These transistors allow a small electrical current to flow through them, controlling the amount of current that can be used by the system. This results in better system performance by preventing energy waste and reducing energy costs. The FDMD8630 also includes two protective diodes to protect the system from electrical or thermal damage.

The FDMD8630 has a wide operating temperature range, making it ideal for applications in areas with extreme temperatures. It is capable of withstanding temperatures as high as 175°C, and it has an endurance of over 200,000 cycles. In addition, this device features low RDS(ON) and high power dissipation, making it suitable for power supply control and load sharing applications. Moreover, it has high input impedance, enabling it to operate in varying conditions.

The FDMD8630 uses enhanced conductive-bridging MOSFETs (CBMOS) in all its components. CBMOS transistors are constructed with a silicon dielectric layer between the gate and the source, enabling them to operate even in the most extreme environments. This makes the FDMD8630 ideal for applications requiring long device lifespan and maximum performance in difficult conditions.

The FDMD8630 has two operating modes: enhancement and depletion. The enhancement mode is used when a gate voltage needs to be applied in order to start the conductivity of the device. The depletion mode is used to turn off the device without the need for externally applied signals. This allows the part to be powered-down rapidly and thereby reducing power consumption.

Overall, the FDMD8630 is an ideal device for environmental control and load sharing applications, due to its wide temperature range, high power dissipation, low RDS(ON), and high input impedance. Its CBMOS transistors enhance its application performance, while its two operating modes make it suitable for rapid control. The FDMD8630 is a highly reliable device, with an endurance of over 200,000 cycles, and it is suitable for a wide range of applications in the energy-management sector.

The specific data is subject to PDF, and the above content is for reference

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