FDP027N08B

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The FDP027N08B is a p-channel high voltage (100V) MOSFET that ensures low on-resistance and ultra-low gate charge, making it ideal for high speed, low power switching applications. It is designed to be used in applications such as high efficiency general purpose motor control, as well as battery-powered consumer, industrial, and commercial applications.

The FDP027N08B is a depletion-mode "enhancement-mode" MOSFET, meaning that it requires a low input voltage to switch on. Additionally, it features an extremely high input impedance, protection against latch-up, and a very rugged operating temperature range.

The device is composed of two silicon nitride dielectric layers separated by a single polysilicon gate. This enables the FDP027N08B to switch on and off with exceptional speed and performance, making it ideal for applications such as high frequency switching and car radio power switching. The extremely low gate charge also allows for lower power consumption and significant cost savings.

The device works by using a thin layer of polysilicon gate which is sandwiched between two layers of silicon nitride. An input voltage is applied to the gate, which causes a depletion or accumulation of charge carriers in the underlying substrate. These charge carriers form an inversion layer, known as the "channel," beneath the gate that can be controlled by the gate voltage. When a positive voltage is applied to the gate, the depletion layer of "holes" is generated and the FDP027N08B is "on"; when the gate voltage is negative, the device is "off."

The FDP027N08B owes much of its performance and efficiency to its design, which uses a polysilicon gate in place of a metal gate. This makes it much easier to control the charge carriers in the inversion layer, allowing for more efficient switching. In addition, the silicon nitride dielectric layers that sandwich the polysilicon gate protect against latch-up, increasing reliability and durability.

The FDP027N08B is an excellent choice for high voltage applications that require low power consumption and high switching speed. Its combination of high voltage, low on-resistance, and low gate charge make it ideal for applications such as general purpose motor control, battery operated consumer equipment, commercial lighting systems, and similar applications.

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