FDP045N10A

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Field effect transistors (FETs) are widely used in many different applications. The FDP045N10A is an industry-standard enhancement-mode power MOSFET, built with advanced high-voltage process technology. It features an excellent dynamic performance and a low on-resistance, making it an ideal choice for power management applications such as industrial motor control, automotive systems and telecommunications.

The FDP045N10A has a drain source voltage (V_DS) rating of 100 V, a drain source current (I_DS) rating of 45 A, a package style of DPAK, and it has an R_DS(on) (max) of 5.5 mΩ (@ V_GS = 5.0V).

The working principle of an FET is based on an electric field produced by a voltage applied between the gate and source. This voltage generates a potential difference between the gate and channel. This potential difference creates an electric field that influences the width of the channel. When the electric field is strong, it reduces the width of the channel and thus lowers the drain current.

FETs may operate in either enhancement or depletion mode. In enhancement mode the channel is open or widened when the voltage is applied to the gate. When a voltage is applied to the gate, the channel between source and drain is widened, and current flows from source to drain. This is the major difference between FETs and BJTs. The opposite situation occurs in depletion mode, where the channel width is decreased due to the electric field.

The FDP045N10A MOSFET has a high-speed switching capability and can be used for various digital switches such as level shifters, gate drivers and motor control applications. It also offers superior EMI performance, making it suitable for telecom, automotive and consumer products applications. On top of that, it works best when driven by fast signals, making it ideal for applications such as high-speed logic gate switches and power switches.

The FDP045N10A MOSFET offers excellent protection against overvoltage transients and short-transmission lines disturbances. It is also equipped with a fast-recovery diode and a low on-resistance to ensure sustained switching operations. The protected drain-source connection makes it ideal for use in high-frequency applications.

In summary, the FDP045N10A is an advanced high-voltage enhancement-mode power MOSFET. It provides an excellent dynamic performance, a low on-resistance, high-speed switching capability and superior EMI performance. It is suitable for a variety of applications ranging from industrial motor control to high-frequency telecom, automotive and consumer products.

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