FDP083N15A

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FDP083N15A is a type of Power MOSFET. It is a single N-channel MOSFET with a breakdown voltage of 100 V, designed for use in power management applications.The device is built on a silicon substrate and features a very low gate capacitance, allowing it to operate at high switching frequencies.

The FDP083N15A is capable of handling up to 15 A of continuous drain current, making it ideal for high power applications. It has a very low on-state resistance (RDS(on)) of 0.083 Ω, meaning that it is capable of providing excellent efficiency when used in switches, drivers and other applications.

The FDP083N15A is an ideal choice for a wide range of applications such as motor control, power management, audio amplifiers, switch mode power supplies, mobile power converters, automotive systems and consumer electronics.

This device uses a metal-oxide-silicon field effect transistor (MOSFET) in order to control the power flow in electronic devices. It works by using the gate to control the movement of electrons between the source and drain terminals. The source and drain terminals are connected through the MOSFET\'s channels, which can be either open or closed, depending on the voltage applied to the gate. When the gate voltage is high, electrons will flow freely between the source and drain, allowing for an uninterrupted flow of current. When the gate voltage is low, the channels are shut off, and no current will flow between the source and drain.

The FDP083N15A is a drain-source enhanced device, meaning that it has higher performance than a regular MOSFET. This device has enhanced immunity to latch-up, improved safe-operating area capability, higher current handling capability and improved switching performance. It can also operate in temperatures up to 175°C, making it suitable for use in environments with high thermal loads.

The FDP083N15A is an ideal device for use in power management applications, offering excellent performance and reliability while still maintaining a small size. It is a cost-effective solution for a wide range of applications, and is an ideal choice for designers who need a high power MOSFET for their designs.

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