FDP047AN08A0 Allicdata Electronics
Allicdata Part #:

FDP047AN08A0FS-ND

Manufacturer Part#:

FDP047AN08A0

Price: $ 2.42
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 75V 80A TO-220AB
More Detail: N-Channel 75V 15A (Tc) 310W (Tc) Through Hole TO-2...
DataSheet: FDP047AN08A0 datasheetFDP047AN08A0 Datasheet/PDF
Quantity: 373
1 +: $ 2.42000
10 +: $ 2.34740
100 +: $ 2.29900
1000 +: $ 2.25060
10000 +: $ 2.17800
Stock 373Can Ship Immediately
$ 2.42
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 310W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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The FDP047AN08A0 is a depletion mode power MOSFET produced by Violet Semiconductor. It is designed for use in general purpose power switching applications and can handle continuous drain current of up to 47A at 25 degrees Celsius. The FDP047AN08A0 is also able to handle voltage up to 800V, so it is suitable for a variety of power management applications.

The FDP047AN08A0 is a depletion type MOSFET, meaning it is an N-channel device. It utilizes two channels of silicon, both having gate oxides. This type of MOSFET works by either pulling electrons away from the channel (in the On state) via the drain, or pushing electrons back into the channel (in the Off state) via the source. In the On state, electrons form a conductive path between the drain and the source, while in the Off state, the electrons are repelled from the channel, creating an insulating layer between the source and drain.

The FDP047AN08A0 is well-suited for use in a variety of power management applications. Its high drain-source voltage and large drain current handling capability make it suitable for use in DC-DC converters, motor drive circuits, switching power supplies, and audio amplifiers. It is also designed for high frequency switching applications, with a low gate capacitance of 2.5pF, as well as low gate charge of 4.2nC.

The FDP047AN08A0 also has advantages in terms of its high frequency switching performance.Its low on-resistance of 0.030 ohms and high speed switching capability make it suitable for high frequency switching applications. Additionally, its low gate charge allows for faster turn-on and turn-off times and the low gate capacitance reduces the power dissipated through gate/source capacitance during switching operations. Moreover, its high breakdown voltage means it can handle high powers with minimal losses.

The FDP047AN08A0 also has advantages in terms of its thermal characteristics. Its thermal resistance is low, meaning it can handle high power dissipations with minimal heating effects. Additionally, its resistance to dV/dt noise provides improved robustness against noise interference from the surrounding environment. Overall, the FDP047AN08A0 is an ideal choice for a wide range of power management applications, especially those requiring high speeds and high powers.

The specific data is subject to PDF, and the above content is for reference

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