FDP030N06B-F102

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The FDP030N06B-F102 is a N-Channel MOSFET which belongs to the FDP03 series. This part is designed specifically with low power losses, high efficiency, and high switching speeds in mind. It has an excellent switching behavior and is therefore often used in various applications. The FDP030N06B-F102 is specifically designed to operate in high voltage applications, making it an ideal choice for those who wish to help minimize power loss while maintaining high efficiency.

Application Field

With its excellent switching ability and efficiency, the FDP030N06B-F102 is widely used in data communication, power management, and industrial applications. This MOSFET is used in a wide range of applications, from power supplies and motor drives, to voltage regulators and servers. Its industry-leading switching performance makes it an ideal choice for applications where exceptional efficiency and power conservation are desired. Additionally, the FDP030N06B-F102 is suitable for use in many LED lighting applications, as it provides excellent thermal and electrical protection. Due to its wide operating voltage range and low resistance, the FDP030N06B-F102 is commonly used in automotive and battery powered applications.

Working Principle

The FDP030N06B-F102 is a N-Channel MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. As its name suggests, the FDP030N06B-F102 utilizes a metal oxide layer to help control the current flow in the device. This metal oxide layer is centrally located between the gate and the source, and helps to control the amount of current that is allowed to pass through the device. In order to control the current, a charge must be applied to the gate, which then activates the thin metal oxide layer and allows certain current to pass. This is what is known as the “MOSFET effect.”

The FDP030N06B-F102 is a highly efficient device and has an ultralow RDS (on) value of 0.012 Ω. This low RDS value makes the FDP030N06B-F102 highly efficient and helps to reduce power losses, ultimately resulting in improved battery life for battery powered applications. The device also has a maximum drain-source breakdown voltage of 62 V and a maximum drain current of 30 A, making it ideal for medium to high voltage applications. The FDP030N06B-F102 also has a fast switching speed, with a typical switch time of 30 ns.

All of these features make the FDP030N06B-F102 an excellent choice for those seeking an efficient and highly reliable MOSFET device. It is an ideal choice for applications such as power supplies, motor drives, LED lighting, and automotive applications, among others. With its excellent switching behavior, high efficiency, and low power losses, the FDP030N06B-F102 is an excellent choice for those who wish to help minimize power consumption while still maintaining a high level of efficiency.

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