
Allicdata Part #: | FDP047N10-ND |
Manufacturer Part#: |
FDP047N10 |
Price: | $ 3.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 120A TO-220 |
More Detail: | N-Channel 100V 120A (Tc) 375W (Tc) Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 996 |
1 +: | $ 3.12000 |
10 +: | $ 3.02640 |
100 +: | $ 2.96400 |
1000 +: | $ 2.90160 |
10000 +: | $ 2.80800 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 15265pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FDP047N10 is a powerful single field-effect transistor (FET) designed for a wide range of applications including switching and amplification. This transistor is part of a growing family of FETs offered by Sanyo, with models that range from highly integrated single FETs to complex multichip modules with sophisticated features.
The FDP047N10 is an enhancement-mode FET in a TO-220 package which is used in a variety of important applications. This device features low on-resistance, low capacitance, and low gate-resistance for excellent performance. Additionally, it features very low off-state leakage current, excellent stability and high reliability.
The working principle of FDP047N10 is based on the flint field-effect theory of operation. In this theory, an electrical field is created by applying an electrical voltage to a pair of electrodes, one of which is the gate. This electrical field produces a charge carrier inversion region at the surface of the semiconductor, forming a conductive path between the source and drain electrodes. The current that passes through this channel is modulated by the applied voltage, resulting in a low-power, high-speed switching action.
FDP047N10 is usually employed in a wide range of applications including:
- Switching applications, such as relays and switches.
- Power control and management, such as voltage or current control.
- Analog signal generation.
- DC and AC power protection.
- High frequency switching applications.
- Power amplifiers and audio amplification.
FDP047N10 is extremely popular in the power control and management industry due to its high level of performance. It offers excellent efficiency, low gate-charge, low on resistance, and low power consumption. Additionally, FDP047N10 is noted for its simplicity, making it an ideal and cost-effective choice for many applications.
The FDP047N10 is a great choice for many different applications because of its low switching losses, low gate charge, and wide range of gains. It is also noted for its excellent thermal properties due to its robust construction and packaging. FDP047N10 is perfect for applications that require low-cost, low-power and dependable switching performance.
The FDP047N10 is a versatile and reliable transistor that has become the standard for many applications in the power control and management industry. With its wide range of gain, low on-resistance, and low gate charge, the FDP047N10 is an excellent choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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