FDP032N08B-F102

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FDP032N08B-F102 is a member of the family of advanced field-effect transistors (FETs) designed for many applications, including light- and power switching, signal processing, and general electronic circuit design. It belongs to single discrete N-channel FETs and Diffused Power MOSFETs (DPMs).

The FDP032N08B-F102 is composed of a parasitic P-channel junction and a parasitic N-channel junction. The device is made using a double-polysilicon process and its terminals are configured as follows:

Source: It is the current carrying electrode and internally connected to negative electrical potential (ground).

Gate: It is a signal controlling electrode and is connected to positive electrical potential.

Drain: It is the current carrying electrode and internally connected to positive electrical potential.

The FDP032N08B-F102 features high breakdown voltage, low input capacitance, excellent temperature stability, and low gate-source leakage current. This makes it suitable for general purpose switching circuits, opto-electronic systems as well as linear applications.

Application Fields and Working Principle

The FDP032N08B-F102 can be used in a wide range of applications, from consumer electronics to industrial applications. In consumer electronics, it is used in automatic gain control circuits, switchmode power supply circuits, LCD monitor contrast control and backlighting, and television transmitter output stages. In industrial applications, FDP032N08B-F102 can be used in motor controllers and PLC circuits.

The working principle of the FDP032N08B-F102 is based on the depletion mode and enhancement mode of action. According to its biasing, the FDP032N08B-F102 is either depletion mode or enhancement mode. In depletion mode, the FET is turned on when its gate terminal is connected to ground. In contrast, an enhancement mode device is turned on when its gate terminal is connected to a positive voltage. This allows the device to be used in both single-ended and push-pull circuits.

The FDP032N08B-F102 also features low input capacitance and internal diode protection, making them suitable for high-speed switching applications. The low junction capacitance of the device also makes it appropriate for applications in high-frequency environments. Finally, the device\'s wide temperature range and high peak voltage ratings make it suitable for applications in which reliability is highly important.

Conclusion

The FDP032N08B-F102 is an advanced field-effect transistor, designed for many applications, including light- and power switching, signal processing, and general electronic circuit design. It features high breakdown voltage, low input capacitance, excellent temperature stability, and low gate-source leakage current, making it suitable for both linear and switchmode applications. It can be used in a wide range of applications, from consumer electronics to industrial applications and its low junction capacitance makes it ideal for high-frequency environments.

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